Atomic-Layer-Deposition-Assisted Interfacial Engineering of Metal-Oxide-Metal Devices via Multilayer Structures to Improve Leakage Characteristics.

Abstract

The defect-controlled charge transfer mechanism in insulators is crucial for advanced electronic devices. In this study, metal/insulator/metal devices with a multilayer stacked structure are developed in which the off-state current value is reduced by 1 order of magnitude compared to a single-layer structure by modulating the deposition conditions of the atomic layer deposition system. The results of x-ray photoelectron spectroscopy suggest that the pressure modulation of the atomic layer deposition system drives the formation of hydroxyl groups. The different band structures formed by such an oxide layer with more hydroxyl groups further affected the current transport. The possible pathways for carrier transport are presented in detail through electrical analysis and provide the potential for different energy band multilayer stacked structures as advanced electronic devices.