Sujata B. Patil, Ranjit P. Nikam, Pranav K. Katkar, Chandrakant D. Lokhande, Raghunath S. Patil
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引用次数: 0
Abstract
The low-cost, binder-free chemical bath deposition (CBD) method was utilized to deposit molybdenum oxide (MoO3) thin films on stainless steel (SS) substrates at various concentrations of sodium molybdate (Na2MoO4) precursor (0.025–0.1 M) and applied as an anode for supercapacitive charge storage. The effect of precursor concentration on the physicochemical properties of electrodes was studied. The MO3 thin films (synthesized using a 0.075 M concentration of Na2MoO4 precursor) exhibited mass loading of 0.56 mg cm−2, a hexagonal crystal structure and microrod-like surface morphology. The formation of MoO3 was proved by Raman and (Energy Dispersive X-ray Analysis) EDAX studies. The MO3 thin film showed a specific capacitance (Cs) of 958.9 F g−1 at 5 mA cm−2 current density. An aqueous asymmetric supercapacitor (ASC) device was assembled using MoO3 as an anode and polyaniline (PANI) as a cathode. The assembled MoO3//H2SO4//PANI device showed a Cs of 53.7 F g−1 with an energy density (ED) of 14.4 Wh kg−1 at a power density (PD) of 1.3 kW kg−1 and 83.7% capacitive retention over 1500 cyclic voltammetry (CV) cycles.
采用低成本、无粘结剂的化学浴沉积(CBD)方法,在不同浓度的钼酸钠(Na2MoO4)前驱体(0.025-0.1 M)下,在不锈钢(SS)衬底上沉积氧化钼(MoO3)薄膜,并将其用作超电容电荷存储的阳极。研究了前驱体浓度对电极理化性质的影响。采用0.075 M浓度的Na2MoO4前驱体合成的MO3薄膜具有0.56 mg cm−2的质量负载、六方晶体结构和微棒状表面形貌。通过拉曼和能量色散x射线分析(EDAX)证实了MoO3的形成。在5 mA cm−2电流密度下,MO3薄膜的比电容Cs为958.9 F g−1。以MoO3为阳极,聚苯胺(PANI)为阴极,组装了水不对称超级电容器(ASC)。组装的MoO3//H2SO4//PANI器件在功率密度(PD)为1.3 kW kg - 1时,Cs为53.7 F g - 1,能量密度(ED)为14.4 Wh kg - 1,在1500个循环伏安(CV)循环中电容保持率为83.7%。
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