Effects of La doping on the structure and superconducting properties of Bi-2212

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jiaxin Chang, Fang Yang, Shengnan Zhang, Hao Cao, Yifan Zhang, Guoqing Liu, Jixing Liu, Chengshan Li, Jianfeng Li, Pingxiang Zhang
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引用次数: 0

Abstract

A series of Bi2-xLaxSr2CaCu2O8+δ (x = 0.00, 0.05, 0.10, 0.15, and 0.20) ceramic samples were synthesized by co-precipitation (CP) method. In this work, the influence of La doping on the phase evolution, microstructure, critical transition temperature, and flux pinning properties of Bi-2212 was investigated. The results indicate that La doping significantly promotes the formation of the Bi-2212 phase. As the La content increases, the a and b axis lengths of Bi-2212 structure gradually increase, while the c-axis length decreases. The La doping will introduce compressive stress into the Bi-O layers. Meanwhile, the modulation structure in Bi-2212 becomes enhanced with La substitution by decreasing the modulation period, which is effectively explained by the extra oxygen model. Furthermore, the critical transition temperatures (\(T_c^{onset}\)) initially increases and then decreases with higher La doping levels, reaching a maximum \(T_c^{onset}\) of 85.9 K for the sample with x = 0.15. The sample also exhibits the strongest flux pinning capability.

La掺杂对Bi-2212结构和超导性能的影响
采用共沉淀法合成了Bi2-xLaxSr2CaCu2O8+δ (x = 0.00, 0.05, 0.10, 0.15和0.20)陶瓷样品。本文研究了La掺杂对Bi-2212的相演化、微观结构、临界转变温度和磁通钉接性能的影响。结果表明,La的掺杂显著促进了Bi-2212相的形成。随着La含量的增加,Bi-2212结构的a、b轴长度逐渐增大,c轴长度逐渐减小。La掺杂会在Bi-O层中引入压应力。同时,La取代使Bi-2212中的调制结构增强,从而缩短了调制周期,这可以用额外氧模型有效地解释。此外,随着La掺杂量的增加,临界转变温度(\(T_c^{onset}\))先升高后降低,当x = 0.15时达到最大值\(T_c^{onset}\)为85.9 K。样品还表现出最强的焊剂钉接能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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