Tariq M. Al-Daraghmeh, Ghulam M. Mustafa, Bisma Younas, Omar Zayed, S. Bouzgarrou, Imed Boukhris, Murefah Mana Al-Anazy, M. S. Al-Buriahi, Q. Mahmood
{"title":"Study of optoelectronic and transport properties of SrCd2X2 (X = P, As, Sb) zintl-phase for renewable energy applications","authors":"Tariq M. Al-Daraghmeh, Ghulam M. Mustafa, Bisma Younas, Omar Zayed, S. Bouzgarrou, Imed Boukhris, Murefah Mana Al-Anazy, M. S. Al-Buriahi, Q. Mahmood","doi":"10.1007/s11082-025-08253-6","DOIUrl":null,"url":null,"abstract":"<div><p>The Zintl phase is a developing group of materials with considerable potential for use in solar cells and energy harvesting technologies. This study comprehensively investigates the structural, electronic, optical, and thermoelectric characteristics of novel Zintl phase alloys SrCd<sub>2</sub>X<sub>2</sub> (X = P, As, Sb) using the density functional theory-based Wien2k code. Thermodynamic and dynamic stability is confirmed by calculating the enthalpy of formation and phonon band structures. The band structure analysis systematically decreased the band gap from 1.32 eV to 0.81 eV and 0.43 eV to replace P with As and Sb, respectively. The interaction between the valence and conduction band edges of the p- and d-states of X and Cd is essential for modulating the band gaps and other physical characteristics. The observed high absorption coefficient with absorption bands in the visible and infrared regions suggests the potential for optoelectronic and IR detectors. Notably, the 1.32 eV bandgap of SrCd<sub>2</sub>P<sub>2</sub> is well within the ideal bandgap range for solar cell applications. Furthermore, applying the BoltzTrap code, the transport properties are evaluated, revealing a low thermal conductivity (0.2–1.7 W/mK) along with a reasonable Seebeck coefficient (242–268 µV/K) and power factor (2.3 W/mK<sup>2</sup>). These findings collectively indicate promising thermoelectric performance.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08253-6","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The Zintl phase is a developing group of materials with considerable potential for use in solar cells and energy harvesting technologies. This study comprehensively investigates the structural, electronic, optical, and thermoelectric characteristics of novel Zintl phase alloys SrCd2X2 (X = P, As, Sb) using the density functional theory-based Wien2k code. Thermodynamic and dynamic stability is confirmed by calculating the enthalpy of formation and phonon band structures. The band structure analysis systematically decreased the band gap from 1.32 eV to 0.81 eV and 0.43 eV to replace P with As and Sb, respectively. The interaction between the valence and conduction band edges of the p- and d-states of X and Cd is essential for modulating the band gaps and other physical characteristics. The observed high absorption coefficient with absorption bands in the visible and infrared regions suggests the potential for optoelectronic and IR detectors. Notably, the 1.32 eV bandgap of SrCd2P2 is well within the ideal bandgap range for solar cell applications. Furthermore, applying the BoltzTrap code, the transport properties are evaluated, revealing a low thermal conductivity (0.2–1.7 W/mK) along with a reasonable Seebeck coefficient (242–268 µV/K) and power factor (2.3 W/mK2). These findings collectively indicate promising thermoelectric performance.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.