Chenhao Li;Chunyue Bo;Xiaoyu Hu;Xiangcong Zhai;Ke Wei;Xinyu Liu;Weijun Luo
{"title":"A Monolithic Depletion-Mode GaN-Based Buck Converter With Integrated RCD Dead Time Generator for Envelope Tracking Power Amplifier","authors":"Chenhao Li;Chunyue Bo;Xiaoyu Hu;Xiangcong Zhai;Ke Wei;Xinyu Liu;Weijun Luo","doi":"10.1109/LMWT.2025.3546234","DOIUrl":null,"url":null,"abstract":"Dead time is a critical technology for improving converter efficiency. This brief presents the first monolithic depletion-mode (d-mode) GaN-based dc-dc buck converter with an integrated dead time generator (DTG). The proposed generator leverages the unidirectional conductivity of diodes in a resistor-capacitor-diode (RCD) topology to generate different delay times for the rising and falling edges of the input PWM signals, thus creating a dead time. The converter is designed using a <inline-formula> <tex-math>$0.25~\\mu $ </tex-math></inline-formula>m d-mode GaN-on-Si process. Measured results demonstrate that the integrated generator can provide a dead time of around 0.4 ns. With the integrated DTG, the peak power-stage efficiency of the converter improves by 4.3%, reaching 86.2%, and a peak output power of 3.5 W at a switching frequency of 100 MHz. Additionally, the GaN converter was tested as an envelope tracking supply modulator (ETSM), achieving an efficiency of 83.4% and an average output power of 3.76 W for an envelope signal with a 20 MHz bandwidth and a 6.5 dB peak-to-average ratio (PAPR).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"613-616"},"PeriodicalIF":0.0000,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10925890/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Dead time is a critical technology for improving converter efficiency. This brief presents the first monolithic depletion-mode (d-mode) GaN-based dc-dc buck converter with an integrated dead time generator (DTG). The proposed generator leverages the unidirectional conductivity of diodes in a resistor-capacitor-diode (RCD) topology to generate different delay times for the rising and falling edges of the input PWM signals, thus creating a dead time. The converter is designed using a $0.25~\mu $ m d-mode GaN-on-Si process. Measured results demonstrate that the integrated generator can provide a dead time of around 0.4 ns. With the integrated DTG, the peak power-stage efficiency of the converter improves by 4.3%, reaching 86.2%, and a peak output power of 3.5 W at a switching frequency of 100 MHz. Additionally, the GaN converter was tested as an envelope tracking supply modulator (ETSM), achieving an efficiency of 83.4% and an average output power of 3.76 W for an envelope signal with a 20 MHz bandwidth and a 6.5 dB peak-to-average ratio (PAPR).