A Monolithic Depletion-Mode GaN-Based Buck Converter With Integrated RCD Dead Time Generator for Envelope Tracking Power Amplifier

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Chenhao Li;Chunyue Bo;Xiaoyu Hu;Xiangcong Zhai;Ke Wei;Xinyu Liu;Weijun Luo
{"title":"A Monolithic Depletion-Mode GaN-Based Buck Converter With Integrated RCD Dead Time Generator for Envelope Tracking Power Amplifier","authors":"Chenhao Li;Chunyue Bo;Xiaoyu Hu;Xiangcong Zhai;Ke Wei;Xinyu Liu;Weijun Luo","doi":"10.1109/LMWT.2025.3546234","DOIUrl":null,"url":null,"abstract":"Dead time is a critical technology for improving converter efficiency. This brief presents the first monolithic depletion-mode (d-mode) GaN-based dc-dc buck converter with an integrated dead time generator (DTG). The proposed generator leverages the unidirectional conductivity of diodes in a resistor-capacitor-diode (RCD) topology to generate different delay times for the rising and falling edges of the input PWM signals, thus creating a dead time. The converter is designed using a <inline-formula> <tex-math>$0.25~\\mu $ </tex-math></inline-formula>m d-mode GaN-on-Si process. Measured results demonstrate that the integrated generator can provide a dead time of around 0.4 ns. With the integrated DTG, the peak power-stage efficiency of the converter improves by 4.3%, reaching 86.2%, and a peak output power of 3.5 W at a switching frequency of 100 MHz. Additionally, the GaN converter was tested as an envelope tracking supply modulator (ETSM), achieving an efficiency of 83.4% and an average output power of 3.76 W for an envelope signal with a 20 MHz bandwidth and a 6.5 dB peak-to-average ratio (PAPR).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"613-616"},"PeriodicalIF":0.0000,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10925890/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Dead time is a critical technology for improving converter efficiency. This brief presents the first monolithic depletion-mode (d-mode) GaN-based dc-dc buck converter with an integrated dead time generator (DTG). The proposed generator leverages the unidirectional conductivity of diodes in a resistor-capacitor-diode (RCD) topology to generate different delay times for the rising and falling edges of the input PWM signals, thus creating a dead time. The converter is designed using a $0.25~\mu $ m d-mode GaN-on-Si process. Measured results demonstrate that the integrated generator can provide a dead time of around 0.4 ns. With the integrated DTG, the peak power-stage efficiency of the converter improves by 4.3%, reaching 86.2%, and a peak output power of 3.5 W at a switching frequency of 100 MHz. Additionally, the GaN converter was tested as an envelope tracking supply modulator (ETSM), achieving an efficiency of 83.4% and an average output power of 3.76 W for an envelope signal with a 20 MHz bandwidth and a 6.5 dB peak-to-average ratio (PAPR).
用于包络跟踪功率放大器的集成RCD死区发生器的单片耗尽型氮化镓降压变换器
死区时间是提高变流器效率的关键技术。本文介绍了第一个基于gan的单片耗尽模式(d模式)dc-dc降压变换器,该变换器具有集成的死区时间发生器(DTG)。所提出的发生器利用电阻-电容-二极管(RCD)拓扑中二极管的单向导电性,为输入PWM信号的上升沿和下降沿产生不同的延迟时间,从而产生死区时间。该变换器采用$0.25~\mu $ m的d模GaN-on-Si工艺设计。测量结果表明,该集成发生器可提供约0.4 ns的死区时间。集成DTG后,变换器的峰值功率级效率提高了4.3%,达到86.2%,开关频率为100 MHz时的峰值输出功率为3.5 W。此外,GaN变换器作为包络跟踪电源调制器(ETSM)进行了测试,在20 MHz带宽和6.5 dB峰均比(PAPR)的包络信号下,实现了83.4%的效率和3.76 W的平均输出功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
6.00
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信