Design of an Ultrawideband MMIC Power Amplifier Based on Mixed Operation Mode

0 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE microwave and wireless technology letters Pub Date : 2025-03-19 DOI:10.1109/LMWT.2025.3549836

Bangjie Zheng;Zhiqun Cheng;Zhiwei Zhang;Hao Jin;Tingwei Gong;Ruizhe Zhang;Chao Le

{"title":"Design of an Ultrawideband MMIC Power Amplifier Based on Mixed Operation Mode","authors":"Bangjie Zheng;Zhiqun Cheng;Zhiwei Zhang;Hao Jin;Tingwei Gong;Ruizhe Zhang;Chao Le","doi":"10.1109/LMWT.2025.3549836","DOIUrl":null,"url":null,"abstract":"This letter presents a novel ultrabroadband, high-efficiency MMIC power amplifier (PA). To reduce performance degradation caused by nonconvergent impedance in high-frequency ultrawideband designs, the extended continuous Class-GF mode (ECCGF) and Class-GF-1 (ECCGF-1) mode is integrated. Then the impedance in the high-frequency range is aligned with the ECCGF-1 mode, while lower frequency impedance corresponds to the ECCGF mode. A three-section L-C matching network is used to satisfy these requirements, with parameter derivations provided. In addition, an L-R series structure is implemented to adjust the input harmonic component, and the impact of L on both the harmonic component and PAE is analyzed. The proposed high-efficiency wideband MMIC PA, fabricated using a 0.25-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m GaN HEMT process, achieves a saturated output power of 44.2–45.8 dBm over 6–18 GHz, with a gain of 18.1–21.1 dB and a PAE of 24.9%–33.6%. The figure of merit (FOM) reaches 1.19, indicating a significant improvement compared with existing works.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 5","pages":"605-608"},"PeriodicalIF":0.0000,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10933584/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This letter presents a novel ultrabroadband, high-efficiency MMIC power amplifier (PA). To reduce performance degradation caused by nonconvergent impedance in high-frequency ultrawideband designs, the extended continuous Class-GF mode (ECCGF) and Class-GF-1 (ECCGF-1) mode is integrated. Then the impedance in the high-frequency range is aligned with the ECCGF-1 mode, while lower frequency impedance corresponds to the ECCGF mode. A three-section L-C matching network is used to satisfy these requirements, with parameter derivations provided. In addition, an L-R series structure is implemented to adjust the input harmonic component, and the impact of L on both the harmonic component and PAE is analyzed. The proposed high-efficiency wideband MMIC PA, fabricated using a 0.25-

$\mu $

m GaN HEMT process, achieves a saturated output power of 44.2–45.8 dBm over 6–18 GHz, with a gain of 18.1–21.1 dB and a PAE of 24.9%–33.6%. The figure of merit (FOM) reaches 1.19, indicating a significant improvement compared with existing works.

查看原文本刊更多论文

基于混合工作模式的超宽带MMIC功率放大器设计

本文介绍一种新型的超宽带、高效率MMIC功率放大器（PA）。为了减少高频超宽带设计中不收敛阻抗导致的性能下降，将扩展连续的Class-GF模式（ECCGF）和Class-GF-1模式（ECCGF-1）集成在一起。那么高频阻抗对应ECCGF-1模式，低频阻抗对应ECCGF模式。采用三段L-C匹配网络来满足这些要求，并给出了参数推导。此外，采用L- r串联结构对输入谐波分量进行调整，并分析了L对谐波分量和PAE的影响。采用0.25- $\mu $ m GaN HEMT工艺制备的高效宽带MMIC放大器在6-18 GHz范围内实现了44.2-45.8 dBm的饱和输出功率，增益为18.1-21.1 dB， PAE为24.9%-33.6%。优良度指数（FOM）达1.19，较现有工程有显著改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

发文量