A C-Band CMOS Window-Shaped-Inductor-Based LC-VCO With Wideband Dual Common-Mode Resonance Technique

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Wendi Chen;Dixian Zhao
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引用次数: 0

Abstract

This letter proposes a C-band dual-mode window-shaped-inductor-based LC-VCO using a wideband dual common-mode (CM) resonance technique. The proposed inductor with mode-switching functionality enables dual-mode operation to extend the frequency tuning range (TR). To reduce phase noise (PN), the dual CM resonance technique is employed, which provides high input impedance across the whole second harmonic band. Fabricated in a 65-nm CMOS process, the proposed oscillator exhibits 58.6% TR from 4.02 to 7.35 GHz. In $1/f^{2}$ region, the peak PN at 10-MHz offset is −151 dBc/Hz, corresponding to a figure-of-merit (FoM) of 192.7 dBc/Hz and FoMT of 208.1 dBc/Hz. In $1/f^{3}$ region, the VCO exhibits a low flicker PN corner of 320–370 kHz across the band. The VCO consumes about 12 mW and occupies a core area of 0.22 mm2.
一种基于c波段窗形电感的宽带双共模谐振LC-VCO
本文提出了一种基于c波段双模窗形电感的LC-VCO,采用宽带双共模(CM)共振技术。该电感具有模式切换功能,可实现双模式操作,以扩展频率调谐范围(TR)。为了降低相位噪声(PN),采用了双CM谐振技术,该技术在整个二次谐波波段提供高输入阻抗。该振荡器采用65纳米CMOS工艺制造,在4.02至7.35 GHz范围内具有58.6%的TR。在$1/f^{2}$区域,10-MHz偏移时的峰值PN为- 151 dBc/Hz,对应于质量因数(FoM)为192.7 dBc/Hz和fmt为208.1 dBc/Hz。在$1/f^{3}$区域,VCO在整个频带内呈现320-370 kHz的低闪烁PN角。VCO的功耗约为12mw,核心面积为0.22 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
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