Mengru Bian, Yincai Yang, Youwen Chen, Tiantian Wei, Wei Deng, Biao Fu and Renhua Qiu
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引用次数: 0
Abstract
Silicon and silicon oxide have become the most prospective anode materials, but the volume variations during charging and discharging have greatly hindered their practical applications. Herein, we constructed a highly ordered, dispersed silicon-molybdenum composite, C@SiOx/MoSe2@NMWCNT, with a three-layer heterojunction structure. In this approach, molybdenum pentachloride (MoCl5) reacts with ethylene glycol to form an ethylene glycol-based organomolybdenum complex, which then undergoes a reaction with triphenylchlorosilane, effectively bridging silicon and molybdenum to form an organometallic compound. After in situ selenization and carbonization, the formed SiOx is dispersed in the framework of MoSe2 nanoflaps to form a SiOx/MoSe2 composite structure. It is then adsorbed onto carbon nanotubes (NMWCNTs) with nitrogen-containing active sites, forming a three-layer heterojunction structure with the outer carbon layer. When used as a sodium-ion battery (SIB) anode, C@SiOx/MoSe2@NMWCNT exhibits an initial discharge-specific capacity (1315 mA h g−1 at 0.1 A g−1) and a high capacity of 526 mA h g−1 after 300 cycles at 0.5 A g−1, demonstrating excellent long-cycle stability. When the current density reaches 5 A g−1, the specific capacity remains at 415 mA h g−1 after 1000 cycles and 353 mA h g−1 after 3000 cycles. Even under a high current density of 10 A g−1, the material maintains remarkable cycling stability, delivering a capacity of 177.79 mA h g−1 after 3000 cycles, illustrating the high potential of silicon for use in SIBs.
硅和氧化硅已成为最有前景的负极材料,但充放电过程中的体积变化极大地阻碍了它们的实际应用。在这里,我们构建了一个高度有序、分散的硅钼复合材料C@SiOx/MoSe2@NMWCNT,具有三层异质结结构。在这种方法中,五氯化钼(MoCl5)与乙二醇反应形成以乙二醇为基础的有机钼配合物,然后与三苯基氯硅烷反应,有效地桥接硅和钼形成有机金属化合物。原位硒化和碳化后,形成的SiOx分散在MoSe2纳米皮瓣的框架中,形成SiOx/MoSe2复合结构。然后将其吸附在含氮活性位点的碳纳米管(NMWCNTs)上,与外层碳层形成三层异质结结构。当用作钠离子电池(SIB)阳极时,C@SiOx/MoSe2@NMWCNT在0.1 a g−1下具有1315 mA h g−1的初始放电比容量,在0.5 a g−1下循环300次后具有526 mA h g−1的高容量,表现出优异的长周期稳定性。当电流密度达到5a g−1时,循环1000次后比容量为415 mA h g−1,循环3000次后比容量为353 mA h g−1。即使在10 a g−1的高电流密度下,该材料也保持着显著的循环稳定性,在3000次循环后提供177.79 mA h g−1的容量,这表明硅在sib中的应用具有很高的潜力。