Preparation and study of a transient heat flux sensor based on PbTe thin film and the transverse thermoelectric effect

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-05-10 DOI:10.1016/j.sna.2025.116658

Songhan Liu, Wenxin Yu, Zhipeng Liu

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Abstract

PbTe films with a preferred orientation were grown on inclined LiAlO₂ substrates by controlling the process parameters of magnetron sputtering without doping other elements. These films were then used as the sensitive surface to fabricate a transient heat flux sensor (THFS). The sensor's sensitive surface was subjected to laser-induced voltage experiments using a semiconductor laser from both the film and substrate sides. The experimental results demonstrate that the induced voltage generated by the thin film is caused by a temperature gradient, confirming that the prepared PbTe film exhibits thermoelectric effects. The investigation of the transverse thermoelectric effect of the THFS yielded the following results: As the film thickness increased, the response voltage initially increased and then decreased. At the same time, the time constant initially decreased and then increased. Additionally, as the growth angle of the thin film increased, the response voltage gradually increased. A dual-functional transient heat flux sensor calibration system was developed to calibrate the static and dynamic characteristics of the THFS. The sensor demonstrated a sensitivity of 85.4 μV/(kW/m²), good linearity and repeatability, and a response time of 112.9 μs. A comparison experiment was conducted in the explosion field with the THFS and atomic layer thermopile heat flux sensor. The results show that the transverse thermoelectric effect of PbTe has excellent potential for application in transient heat flux measurement.

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基于PbTe薄膜和横向热电效应的瞬态热流传感器的制备与研究

在不掺杂其他元素的情况下，通过控制磁控溅射工艺参数，在倾斜LiAlO 2衬底上生长出具有优选取向的PbTe薄膜。然后用这些薄膜作为敏感表面来制造瞬态热通量传感器（THFS）。利用半导体激光器从薄膜和衬底两侧对传感器敏感表面进行了激光诱导电压实验。实验结果表明，薄膜产生的感应电压是由温度梯度引起的，证实了制备的PbTe薄膜具有热电效应。对THFS的横向热电效应进行了研究，结果表明：随着薄膜厚度的增加，响应电压先升高后降低；同时，时间常数先减小后增大。此外，随着薄膜生长角度的增大，响应电压逐渐增大。研制了一种双功能瞬态热通量传感器标定系统，用于标定THFS的静态和动态特性。该传感器灵敏度为85.4 μV/（kW/m²），具有良好的线性度和重复性，响应时间为112.9 μs。用THFS和原子层热电堆热流传感器在爆炸现场进行了对比实验。结果表明，PbTe的横向热电效应在瞬态热通量测量中具有良好的应用潜力。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...