{"title":"Tuning microstructure and optoelectronic performance in AZO/Ag/AZO and AZO/Cu/AZO multilayers: A comparative investigation","authors":"Djelloul Mendil , Tahar Touam , Azeddine Chelouche , Atmane Djermoune , Salim Ouhenia , Djamel Djouadi , Fatiha Challali","doi":"10.1016/j.optmat.2025.117154","DOIUrl":null,"url":null,"abstract":"<div><div>The effects of AZO layer thickness (25–65 nm) and metal type (Ag: 10 nm, Cu: 13 nm) on the microstructural and optoelectronic properties of AZO/Ag/AZO and AZO/Cu/AZO multilayers were investigated. X-ray diffraction (XRD) confirmed improved crystallinity and crystallite size with increasing AZO thickness, with AZO/Ag/AZO showing superior crystal quality. Transmission electron microscopy (TEM) verified uniform thickness and well-defined interfaces. Field emission scanning electron microscopy (FESEM) revealed that surface morphology and grain size were strongly affected by AZO thickness and metal type. Transmittance spectra showed that thicker AZO layers reduced visible transmittance, with AZO/Cu/AZO exhibiting better NIR performance. Photoluminescence (PL) spectra indicated a decrease in emission intensity, a slight UV redshift, and faster decay in AZO/Ag/AZO. Hall-effect measurements demonstrated that AZO thickness and metal type influence optoelectronic performance, with AZO/Ag/AZO achieving the highest figure of merit of 3.66 × 10<sup>−4</sup> Ω<sup>−1</sup> at 25 nm AZO thickness, highlighting its optoelectronic potential.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"165 ","pages":"Article 117154"},"PeriodicalIF":3.8000,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925346725005142","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The effects of AZO layer thickness (25–65 nm) and metal type (Ag: 10 nm, Cu: 13 nm) on the microstructural and optoelectronic properties of AZO/Ag/AZO and AZO/Cu/AZO multilayers were investigated. X-ray diffraction (XRD) confirmed improved crystallinity and crystallite size with increasing AZO thickness, with AZO/Ag/AZO showing superior crystal quality. Transmission electron microscopy (TEM) verified uniform thickness and well-defined interfaces. Field emission scanning electron microscopy (FESEM) revealed that surface morphology and grain size were strongly affected by AZO thickness and metal type. Transmittance spectra showed that thicker AZO layers reduced visible transmittance, with AZO/Cu/AZO exhibiting better NIR performance. Photoluminescence (PL) spectra indicated a decrease in emission intensity, a slight UV redshift, and faster decay in AZO/Ag/AZO. Hall-effect measurements demonstrated that AZO thickness and metal type influence optoelectronic performance, with AZO/Ag/AZO achieving the highest figure of merit of 3.66 × 10−4 Ω−1 at 25 nm AZO thickness, highlighting its optoelectronic potential.
期刊介绍:
Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials.
OPTICAL MATERIALS focuses on:
• Optical Properties of Material Systems;
• The Materials Aspects of Optical Phenomena;
• The Materials Aspects of Devices and Applications.
Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.