Sub-10 nm energy-efficient tunnel FETs based on MoSi2N4 monolayer

Abstract

The MoSi${}_2$N${}_4$ monolayer is investigated as a channel material for sub-10 nm Tunnel Field-Effect Transistors (TFETs) to overcome the limitations of CMOS technology in power consumption and scaling. Following the Non-Equilibrium Green’s Function (NEGF) formalism, the study investigates key performance parameters that comprise ON-state current ($I_{\text{ON}}$), OFF-state current ($I_{\text{OFF}}$), ON/OFF current ratio, and sub-threshold swing ($SS$). Tensile strain (+2%) enhances $I_{\text{ON}}$, while compressive strain (-2%) reduces $I_{\text{OFF}}$ significantly, leading to a very high ON/OFF ratio. The $SS$ is measured around 14 mV/dec below the Boltzmann limit of conventional FETs. The $n$-TFET and $p$-TFET structures are explored through I–V characteristics, and an inverter gate is examined, demonstrating the potential of the material for logic applications. The obtained low OFF-current and $SS$ values for sub-10 nm channel length suggest that MoSi${}_2$N${}_4$-based TFET is a promising option for the next-generation nanoelectronics with high performance, low static power consumption, and energy efficiency.