Performance enhancement of Sb₂Se₃ solar cells via bilayer architecture: a SCAPS-1D simulation study

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shriya Sakul Bal, Arindam Basak, Udai P. Singh
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Abstract

The present paper is about a new Sb2Se3/CMTS bilayer structure solar cell, which has been modeled to achieve high efficiency at least fabrication costs. Copper Manganese Tin Sulfide (CMTS) and Sb2Se3 serve as absorber layers in this suggested bilayer configuration. A research study concerning the effect of different variables like the impact of thickness of absorber layer and doping concentration on the performance of the device which is being carried out using SCAPS-1D software. With a thickness of 1000 nm for Sb2Se3 and 3000 nm for CMTS absorber layers, a maximum efficiency of 12.86% was observed. Furthermore, an efficient technique has been proposed to enhance the efficiency, with the addition of one additional absorber layer in combination with the Sb2Se3 layer. This layer helps to improve the optical absorption coefficient and lessen the recombination losses, and subsequently results in the reduction of Voc deficit. It has been found that the design proposed for theSb2Se3/CMTS bilayer structure shows an efficiency of 12.86%. This makes it a possible substitute for obtaining stable and highly efficient bilayer solar cells.

双层结构增强Sb₂Se₃太阳能电池性能的SCAPS-1D模拟研究
本文介绍了一种新的Sb2Se3/CMTS双层结构太阳能电池,该电池已被建模以实现高效率和低制造成本。在这种建议的双层结构中,铜锰锡硫化物(CMTS)和Sb2Se3作为吸收层。利用SCAPS-1D软件进行吸收层厚度、掺杂浓度等不同变量对器件性能影响的研究。当Sb2Se3层厚度为1000 nm, CMTS层厚度为3000 nm时,吸收效率最高可达12.86%。此外,还提出了一种有效的技术来提高效率,即在Sb2Se3层的基础上增加一个额外的吸收层。这一层有助于提高光吸收系数,减少复合损失,从而降低Voc赤字。结果表明,b2se3 /CMTS双层结构的效率为12.86%。这使它成为获得稳定和高效的双层太阳能电池的可能替代品。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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