Effects of Indium content on interfacial reaction and microstructure evolution of Cu/SAC-xIn/ENEPIG BGA solder joints

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yiling Lin, Ruisheng Xu, Yuanyuan Qiao, Ning Zhao
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引用次数: 0

Abstract

The effects of Indium (In) content on interfacial reaction and microstructure evolution of Cu/Sn-3.0Ag-0.5Cu-xIn/ENEPIG (SAC-xIn, x = 0, 1, 2, 5 wt.%) ball grid array (BGA) solder joints were investigated. The growth of intermetallic compounds (IMCs) were suppressed by the solid dissolution of In into (Cu,Ni)6(Sn,In)5, which further inhibited the growth of Cu3Sn. The IMCs at the SAC/Cu interface exhibited the typical scallop-like morphology. As the In content increased, the IMCs became flatter while their grain size increased slightly. At the ENEPIG side, the IMCs changed from large rod-like to small needle-like shapes. Notably, the effects of In addition on the inhibition of the IMC growth and the microstructure refinement of the IMCs were most pronounced when the In content was 2 wt.%. While, the inhibition effect was weakened due to the formation of the Ag2In phase in the Cu/SAC-5In/ENEPIG BGA solder joints. Also, In addition promoted the dissolution of the Cu substrate and inhibited the dissolution of the ENEPIG substrate, which further affected the Cu-Ni cross-interaction in the Cu/SAC-xIn/ENEPIG BGA solder joints. The growth, microstructure evolution and suppression mechanism of the interfacial IMCs in the Cu/SAC-xIn/ENEPIG BGA solder joints were probed and discussed.

铟含量对Cu/SAC-xIn/ENEPIG BGA焊点界面反应及微观结构演变的影响
研究了铟(In)含量对Cu/Sn-3.0Ag-0.5Cu-xIn/ENEPIG (SAC-xIn, x = 0,1,2,5 wt.%)球栅阵列(BGA)焊点界面反应和微观结构演变的影响。In固溶于(Cu,Ni)6(Sn,In)5中抑制了金属间化合物(IMCs)的生长,进而抑制了Cu3Sn的生长。在SAC/Cu界面处的IMCs表现出典型的扇贝状形态。随着In含量的增加,IMCs逐渐变平,晶粒尺寸略有增大。在ENEPIG侧,imc由大棒状变为小针状。值得一提的是,In含量为2 wt.%时,In对IMC生长的抑制作用和IMC的微观细化效果最为明显。而Cu/SAC-5In/ENEPIG BGA焊点中由于Ag2In相的形成,抑制作用减弱。此外,还促进了Cu衬底的溶解,抑制了ENEPIG衬底的溶解,从而进一步影响了Cu/SAC-xIn/ENEPIG BGA焊点中Cu- ni的相互作用。探讨了Cu/SAC-xIn/ENEPIG BGA焊点中界面IMCs的生长、微观结构演变及抑制机理。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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