Near-infrared self-powered RuS2xSe2−2x alloy photodetector via chemical vapor deposition RuSe2 and post-sulfurization process

IF 9.6 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Jaehyeok Kim, Hwi Yoon, Inkyu Sohn, Tatsuya Nakazawa, Sangyoon Lee, Donghyun Kim, Yusuke Ohshima, Hiroki Sato, Seunggi Seo, Sojeong Eom, Seung-Min Chung, Hyungjun Kim
{"title":"Near-infrared self-powered RuS2xSe2−2x alloy photodetector via chemical vapor deposition RuSe2 and post-sulfurization process","authors":"Jaehyeok Kim,&nbsp;Hwi Yoon,&nbsp;Inkyu Sohn,&nbsp;Tatsuya Nakazawa,&nbsp;Sangyoon Lee,&nbsp;Donghyun Kim,&nbsp;Yusuke Ohshima,&nbsp;Hiroki Sato,&nbsp;Seunggi Seo,&nbsp;Sojeong Eom,&nbsp;Seung-Min Chung,&nbsp;Hyungjun Kim","doi":"10.1007/s12598-024-03152-3","DOIUrl":null,"url":null,"abstract":"<div><p>Ruthenium (Ru)-based chalcogenide (S, Se) is a promising material in various fields, such as optics, photoelectrodes, and electrocatalysis, owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared (NIR) and its high absorption coefficient. In this study, we report the synthesis of RuSe<sub>2</sub> thin films by chemical vapor deposition (CVD) with a bandgap matching the NIR region at 0.52 eV. Further, we demonstrated RuS<sub>2<i>x</i></sub>Se<sub>2−2<i>x</i></sub> alloy films using the post-sulfurization process after CVD RuSe<sub>2</sub> with a tunable bandgap from 0.52 to 1.39 eV depending on sulfur composition. Remarkably, RuS<sub>2<i>x</i></sub>Se<sub>2−2<i>x</i></sub> alloy film metal–semiconductor–metal (MSM) photodetector sulfurized at 500 °C, with a 0.75 eV bandgap, exhibits enhanced broad absorption across NIR spectral ranges, suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias. We believe the bandgap-tunable RuS<sub>2<i>x</i></sub>Se<sub>2−2<i>x</i></sub> thin film through an efficient deposition method could be suitable for various optoelectronic applications.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":749,"journal":{"name":"Rare Metals","volume":"44 6","pages":"4050 - 4060"},"PeriodicalIF":9.6000,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Rare Metals","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12598-024-03152-3","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Ruthenium (Ru)-based chalcogenide (S, Se) is a promising material in various fields, such as optics, photoelectrodes, and electrocatalysis, owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared (NIR) and its high absorption coefficient. In this study, we report the synthesis of RuSe2 thin films by chemical vapor deposition (CVD) with a bandgap matching the NIR region at 0.52 eV. Further, we demonstrated RuS2xSe2−2x alloy films using the post-sulfurization process after CVD RuSe2 with a tunable bandgap from 0.52 to 1.39 eV depending on sulfur composition. Remarkably, RuS2xSe2−2x alloy film metal–semiconductor–metal (MSM) photodetector sulfurized at 500 °C, with a 0.75 eV bandgap, exhibits enhanced broad absorption across NIR spectral ranges, suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias. We believe the bandgap-tunable RuS2xSe2−2x thin film through an efficient deposition method could be suitable for various optoelectronic applications.

Graphical abstract

采用化学气相沉积和后硫化工艺制备的近红外自供电RuS2xSe2 - 2x合金光电探测器
钌(Ru)基硫系化合物(S, Se)具有在可见光至近红外(NIR)光照下产生载流子的合适带隙和较高的吸收系数,在光学、光电极和电催化等领域具有广阔的应用前景。在这项研究中,我们报道了化学气相沉积(CVD)法制备了带隙与近红外区相匹配的0.52 eV的rus2薄膜。此外,我们还利用化学气相沉积后的后硫化工艺证明了RuS2xSe2 - 2x合金薄膜,其带隙根据硫的组成在0.52至1.39 eV之间可调。值得注意的是,在500°C下硫化的RuS2xSe2−2x合金薄膜金属-半导体-金属(MSM)光电探测器具有0.75 eV的带隙,在近红外光谱范围内具有增强的宽吸收,即使在零偏压下也能抑制暗电流,并且在近红外波长范围内具有较高的光响应性。我们相信,通过一种有效的沉积方法,带隙可调RuS2xSe2 - 2x薄膜可以适用于各种光电应用。图形抽象
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Rare Metals
Rare Metals 工程技术-材料科学:综合
CiteScore
12.10
自引率
12.50%
发文量
2919
审稿时长
2.7 months
期刊介绍: Rare Metals is a monthly peer-reviewed journal published by the Nonferrous Metals Society of China. It serves as a platform for engineers and scientists to communicate and disseminate original research articles in the field of rare metals. The journal focuses on a wide range of topics including metallurgy, processing, and determination of rare metals. Additionally, it showcases the application of rare metals in advanced materials such as superconductors, semiconductors, composites, and ceramics.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信