Limited Cu-doping effect on morphological, structural, optical and electrochemical properties of nickel oxide nano-composite thin films

IF 2.7 Q2 PHYSICS, CONDENSED MATTER
Tithi Sen , Amrita Biswas , Rajalingam Thangavel , Udayabhanu Gopalakrishnan Nair , Tapan Kumar Rout
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引用次数: 0

Abstract

The impact of limited doping of cupric (Cu2+) ion in Cu:NiO thin films substrate was examined and analysed with their morphological and opto-electrochemical properties. Many researchers in the past have already explained the concept of limited doping in the case for the transport properties of organic semiconductors. Here, we explore the impact of limited doping of copper in nickel oxide thin films as an inorganic semiconductor. The changes of morphological and optical properties of low and heavy non-stoichiometrically Cu doped NiO p-type semiconductor were analysed by X-Ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FE-SEM), RAMAN and photoluminescence (PL) spectra. The electrochemical properties of Cu:NiO and pristine NiO thin films were monitored by cyclic voltammetry study.
微量cu掺杂对氧化镍纳米复合薄膜形貌、结构、光学和电化学性能的影响
考察和分析了Cu:NiO薄膜衬底中微量掺杂Cu2+对薄膜形貌和光电性能的影响。过去许多研究人员已经在有机半导体的输运性质中解释了有限掺杂的概念。在这里,我们探讨了铜在氧化镍薄膜中作为无机半导体的有限掺杂的影响。采用x射线衍射(XRD)、x射线光电子能谱(XPS)、原子力显微镜(AFM)、场发射扫描电镜(FE-SEM)、拉曼光谱(RAMAN)和光致发光(PL)光谱分析了低、重非化学计量铜掺杂NiO p型半导体的形貌和光学性质的变化。采用循环伏安法研究了Cu:NiO和原始NiO薄膜的电化学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
6.50
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