The utilization of vanadium from spent catalysts for preparation of layered K0.51V2O5 as aqueous-based potassium ion cathodes

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Junyi Wu , Xinyue Ouyang , Weiwei Wang , Rui Huang , Jun Yan , Xing Ou , Dongyang Li , Wenchao Zhang , Fangli Zhang
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Abstract

The accumulation of spent selective catalytic reduction (SCR) catalysts has resulted in a huge loss of metal resources. Among them, regenerating vanadium (V) from spent SCR catalysts for the preparation of energy storage materials represent a promising direction. Herein, we proposed a wet method to recover V and further synthesized layered materials (K0.51V2O5) as cathodes for aqueous-based potassium ion batteries. To help better improve the electrochemical performance, (potassium chloride (KCl) and potassium trifluoromethanesulfonate (KOTf)) were employed as the electrolytes. As results, the cells could deliver a high specific capacity of 109.7 mAh g−1 in 3 M KOTf electrolyte, which is far beyond than those in KCl electrolytes. Furthermore, the molecular dynamic simulations and spectroscopic analysis indicated that strong cation anion interactions could be observed in concentrated KOTf electrolytes, which could weaken water molecule hydrogen bonds and contribute to the formation of salt derived solid electrolyte interphase.
利用废催化剂中的钒制备层状K0.51V2O5作为水基钾离子阴极
选择性催化还原(SCR)废催化剂的积累造成了金属资源的巨大损失。其中,从废SCR催化剂中再生钒(V)制备储能材料是一个很有前途的方向。本文提出了一种湿法回收V的方法,并进一步合成了层状材料(K0.51V2O5)作为水基钾离子电池的阴极。为了更好地提高电化学性能,采用氯化钾(KCl)和三氟甲磺酸钾(KOTf)作为电解液。结果表明,该电池在3 M KOTf电解液中可提供109.7 mAh g−1的高比容量,远远超过在KCl电解液中的比容量。此外,分子动力学模拟和光谱分析表明,高浓度KOTf电解质中存在强的正负离子相互作用,这种相互作用可以削弱水分子氢键,促进盐源固体电解质界面相的形成。
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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