Exploring the Advanced Optoelectronic Properties of Nd-Doped ZnO Thin Films for Next-Generation Perovskite Solar Cells

Abstract

This research provides valuable insights into the effects of neodymium (Nd) doping on the structural, optical, and electrical properties of zinc oxide (ZnO) thin films coated on an ITO substrate. This study deepened our understanding of the unique characteristics and potential applications of these materials by utilizing comprehensive characterization techniques, including X-ray diffraction (XRD), Atomic Force Microscopy (AFM), UV–vis spectroscopy, and photoluminescence spectroscopy. XRD analysis confirmed the presence of hexagonal crystal structures, whereas AFM imaging revealed a distinctive granular configuration. The results indicated that the grain size of the thin films increased from 35.86 to 46.09 nm with increasing Nd doping concentration, demonstrating a relationship between Nd concentration and microstructure. The optical bandgap ranged from 3.29 to 3.21 eV for pure and doped thin films at different DC sputtering powers, and the electrical resistivity decreased from 1.54 × 10^–3 to 0.26 × 10^–3 Ω·cm with Nd doping, suggesting their potential for optoelectronic applications. The study also presents a numerical analysis of Cs₂BiCuI₆-based perovskite photovoltaic cells (PPVCs) incorporating Nd-doped ZnO as the electron transport layer (ETL). This research investigates the impact of different Nd doping concentrations (20, 30, and 40 W) on the performance of solar cells by analyzing key metrics.