Derek A. Stewart*, Jim W. Reiner, John C. Read and Michael K. Grobis,
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引用次数: 0
Abstract
The switching characteristics for Ge10Se54As36 (GSA) ovonic threshold switch (OTS) selectors as a function of the OTS thickness were examined for various devices. We find that thicker GSA devices (20 and 30 nm) switch at lower effective electric fields compared to the 10 nm GSA device. In addition, the OFF state I–V curves for thicker GSA devices exhibit different functional regimes, indicating the presence of additional transport mechanisms. To explain this thickness dependence, we expand the lucky drift electron model for avalanche multiplication so that it can handle nanoscale thin films. Using this model, we show that avalanche multiplication is enhanced in thicker GSA OTS devices and this can explain the observed thickness dependence. This work provides unambiguous experimental evidence that avalanche breakdown plays a role in OTS switching.
期刊介绍：
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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