Area-Dependent Resistive Switching and Interfacial Dynamics in GCMO-Based Memristors

IF 4.3 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials Pub Date : 2025-04-23 DOI:10.1021/acsaelm.5c0040310.1021/acsaelm.5c00403

Anni Antola*, Johanna Laaksonen, Hannu Huhtinen, Ilari Angervo, Sari Granroth, Alejandro Schulman, Pekka Laukkanen and Petriina Paturi,

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引用次数: 0

Abstract

This study explores the area-dependent resistive switching (RS) characteristics of Gd_0.2Ca_0.8MnO₃ (GCMO)-based memristors with aluminum (Al) and gold (Au) electrodes, emphasizing their potential for neuromorphic computing applications. Using a combination of electrical measurements and X-ray photoelectron spectroscopy (XPS), we demonstrate that the high-resistance (HRS) and low-resistance (LRS) states exhibit predictable scaling with device area, with HRS resistances ranging from 10⁷ to 10⁸ Ω and LRS from 10⁵ to 10⁷ Ω, supporting the hypothesis of interface-type RS. XPS depth profiling revealed notable differences in AlO_x interfacial layer composition between HRS and LRS, with a higher oxide content and a widened interfacial region in HRS. Additionally, the multistate RS capability of up to ten distinct levels was achieved by modulating applied voltages, highlighting GCMO’s suitability as a material for synaptic weight storage in artificial neural networks. Our findings underscore GCMO’s promise for energy-efficient, scalable memristor-based systems.

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基于gcmos的记忆电阻器的面积相关电阻开关和界面动力学

本研究探讨了采用铝（Al）和金（Au）电极的Gd0.2Ca0.8MnO3 （GCMO）基忆阻器的面积相关电阻开关（RS）特性，强调了其在神经形态计算应用中的潜力。通过电测量和x射线光电子能谱（XPS）的结合，我们发现高阻（HRS）和低阻（LRS）状态随器件面积呈可预测的比例变化，HRS电阻范围为107 ~ 108 Ω， LRS为105 ~ 107 Ω，支持界面型RS的假设。XPS深度剖面显示，HRS和LRS之间的AlOx界面层组成存在显著差异。具有较高的氧化物含量和较宽的界面区域。此外，通过调制外加电压，可以实现多达10个不同水平的多态RS能力，突出了GCMO作为人工神经网络突触权重存储材料的适用性。我们的研究结果强调了GCMO在节能、可扩展的忆阻器系统方面的前景。

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来源期刊

ACS Applied Electronic Materials Multiple-

CiteScore

7.20

自引率

4.30%

发文量

567

期刊介绍： ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/Abstracted： Web of Science SCIE Scopus CAS INSPEC Portico