Beomkyu Shin, Jong Yun Kim, Oh Hun Gwon, Seok-Ju Kang, Hye Ryung Byun, Daehyun Ryu, Kyu Yeon Kim and Young-Jun Yu*,
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引用次数: 0
Abstract
In this study, we demonstrated a multiresistive state memristor with UV-ozone-treated two-dimensional semiconductor MoS2 to realize resistive switching. A lateral junction of the MoS2 and MoOx memristor was prepared by selectively oxidizing a portion of the MoS2 surface. Memristive properties were investigated following the confirmation of MoOx formation on the MoS2 surface via optical and electrical characterization. These properties included multiresistive state behavior dependent on the voltage sweep range, low resistance state current level twice that of the high resistance state, and robust stability (∼5000 s). Consequently, the potential for developing a two-dimensional, oxide-based memristor is presented based on an analysis of the voltage–current relationship and proposed switching mechanism of the MoS2–MoOx junction.
期刊介绍：
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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