Structure–property relationships of Group IV (Si–Ge–Sn) semiconductor nanocrystals and nanosheets – current understanding and status

Abstract

Group IV semiconductor nanomaterials, including silicon nanocrystals and more recently nanosheets, are emerging as promising candidates for next-generation optoelectronic applications due to their tunable room-temperature photoluminescence and compatibility with CMOS technologies. However, the intrinsic indirect bandgaps of Group IV seminconductors remains a key limitation. Here, we highlight our group’s contributions toward understanding structure–property relationships in solution-processable Group IV semiconductor nanocrystals and nanosheets - specifically, understanding how their structure, surface chemistry, and chemical composition influence affect properties such as bandgap.