A plasmon-electron addressable and CMOS compatible random access memory

Abstract

The rapid increase in data generation and storage poses substantial challenges, necessitating a transition from traditional charge-based devices to high-speed optical alternatives for computational tasks. Photon-assisted or plasmon-assisted memory devices emerge as promising solutions for facilitating faster read/write operations. By using surface plasmon polaritons for writing operations, we can dynamically read memory states through the measurement of tunneling currents in thin layers of HfO₂ ferroelectric materials sandwiched between Au thin film electrodes. Our plasmon-addressable memory platform offers versatile functionality in both nanoelectronic and nanoplasmonic systems, demonstrating a robust hybrid architecture with transformative potential for computing and data processing applications.