N. V. Sidorov, M. N. Palatnikov, L. A. Bobreva, O. V. Palatnikova, P. P. Sverbil, A. Yu. Pyatyshev, M. K. Tarabrin, A. A. Teslenko
{"title":"Defect structures in active nonlinear LiNbO3:Tb3+ single crystals with subthreshold terbium doping","authors":"N. V. Sidorov, M. N. Palatnikov, L. A. Bobreva, O. V. Palatnikova, P. P. Sverbil, A. Yu. Pyatyshev, M. K. Tarabrin, A. A. Teslenko","doi":"10.1007/s10854-025-14855-3","DOIUrl":null,"url":null,"abstract":"<div><p>Optical microscopy studies have demonstrated that the chemical composition of the Li<sub>2</sub>O–Nb<sub>2</sub>O<sub>5</sub>–Tb<sub>2</sub>O<sub>3</sub> melt has a significant effect on the macro- and microdomain configuration of the growth defect structure in the bulk of the nonlinear optical LiNbO<sub>3</sub> single crystal doped with subthreshold concentrations of the Tb<sup>3+</sup> ions, which is promising as an active nonlinear laser medium for continuous-wave generation in the blue spectral range. In the frequency range of 1000–2000 cm<sup>−1</sup>, second-order Raman lines were detected in LiNbO<sub>3</sub>:Tb<sup>3+</sup>(0.1, 0.48, 2.21 wt%) crystals, the intensity and frequencies of which depend on the concentration of the Tb<sup>3+</sup> ions. These lines are interpreted as manifestations of bound states of fundamental optical vibrations formed as a result of strong anharmonicity of vibrations and the presence of various types of structural defects in the crystal. It is shown that the presence of lines with frequencies of 3470, 3483, and 3486 cm<sup>−1</sup> in the IR absorption spectra of LiNbO<sub>3</sub>:Tb<sup>3+</sup>(0.1, 0.48, 2.21 wt%) crystals in the region of OH-group stretching vibrations is due to the violation of the stoichiometry (Li/Nb values) of the crystal and the formation of complex defects (V<sub>Li</sub>-OH). It is established that in the studied LiNbO<sub>3</sub>:Tb<sup>3+</sup> crystals, there are two times fewer V<sub>Li</sub> point defects than in the congruent LiNbO<sub>3</sub> crystal.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 13","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14855-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Optical microscopy studies have demonstrated that the chemical composition of the Li2O–Nb2O5–Tb2O3 melt has a significant effect on the macro- and microdomain configuration of the growth defect structure in the bulk of the nonlinear optical LiNbO3 single crystal doped with subthreshold concentrations of the Tb3+ ions, which is promising as an active nonlinear laser medium for continuous-wave generation in the blue spectral range. In the frequency range of 1000–2000 cm−1, second-order Raman lines were detected in LiNbO3:Tb3+(0.1, 0.48, 2.21 wt%) crystals, the intensity and frequencies of which depend on the concentration of the Tb3+ ions. These lines are interpreted as manifestations of bound states of fundamental optical vibrations formed as a result of strong anharmonicity of vibrations and the presence of various types of structural defects in the crystal. It is shown that the presence of lines with frequencies of 3470, 3483, and 3486 cm−1 in the IR absorption spectra of LiNbO3:Tb3+(0.1, 0.48, 2.21 wt%) crystals in the region of OH-group stretching vibrations is due to the violation of the stoichiometry (Li/Nb values) of the crystal and the formation of complex defects (VLi-OH). It is established that in the studied LiNbO3:Tb3+ crystals, there are two times fewer VLi point defects than in the congruent LiNbO3 crystal.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.