Influence of PTC and interface dynamics of core–shell BST@SiO2 fillers on the insulation properties of epoxy composites at different temperatures and electric fields
IF 2.8 4区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Taqi Ur Rahman, Xiangrong Chen, Tianyin Zhang, Jiale Song, Zelin Hong, Kai Yin, Muhammad Awais, Ashish Paramane
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引用次数: 0
Abstract
This study explores an efficient encapsulation strategy to improve the dielectric insulation properties of epoxy (EP) composites. The integration of different concentrations of BST@SiO2 into the EP matrix markedly enhances the overall performance of the composites, particularly under high-temperature conditions and diverse electric fields. The core–shell structure, where barium strontium titanate (BST) particles are coated with an insulating silica shell, serves to reduce DC electrical conductivity, prevent space charge accumulation, and improve DC breakdown strength. The silica coating restricts the movement of charge carriers, while the positive temperature coefficient (PTC) characteristics of BST further enhances insulation properties by transitioning to an insulative state near the Curie temperature. The electrical double-layer effect in the composite helps to suppress excessive charge injection through Coulombic repulsion, preventing the formation of high local electric fields, which are often a direct cause of electrical breakdown. This mechanism ensures higher breakdown strength by delaying the occurrence of critical local fields. The encapsulated BST@SiO2 particles provide improved thermal stability, contributing to the composite’s ability to retain superior dielectric properties at elevated temperatures. The reported methodology for fabricating these nanocomposites offers valuable insights into developing EP-based materials with enhanced insulation properties, particularly for high-performance applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.