Magnetoimpedance effect and magnetic properties in FINEMET/CoFeSiB composite ribbons

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-05-08 DOI:10.1007/s10854-025-14871-3

Yongbin Guo, Dao Wang, Yizhang Li, Renpeng Xing, Zhaoxia Xu, Xiuwei Yang, Zhongmin Wang, Zhenjie Zhao

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引用次数: 0

Abstract

The systematic investigation into the impact of CoFeSiB film on the structural, magnetic properties, magneto-impedance (MI) effect, and magnetic interactions of FINEMET ribbon reveals significant enhancements. By strategically applying a CoFeSiB coating, the transverse magnetic anisotropy of the FINEMET ribbon, leading to markedly improved MI and soft magnetic characteristics. This modulation is driven by the intricate magnetic interactions between the CoFeSiB film and the FINEMET ribbon. Through precise control of the CoFeSiB film thickness, the critical role these interactions play in shaping magnetic properties and the MI effect. Notably, this approach achieves a substantial increase in the MI effect from 30% for uncoated ribbon tape to 65%. These findings offer valuable theoretical insights and practical guidelines for optimizing the magnetic properties and giant magneto-impedance (GMI) effects in soft magnetic materials.

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FINEMET/CoFeSiB复合带的磁阻抗效应和磁性能

系统研究了CoFeSiB薄膜对FINEMET带的结构、磁性能、磁阻抗（MI）效应和磁相互作用的影响，发现了显著的增强作用。通过有策略地应用CoFeSiB涂层，FINEMET带的横向磁各向异性得到显著改善，从而显著改善了MI和软磁特性。这种调制是由CoFeSiB薄膜和FINEMET带之间复杂的磁相互作用驱动的。通过精确控制CoFeSiB薄膜厚度，这些相互作用在形成磁性和MI效应中发挥关键作用。值得注意的是，这种方法将无涂层带状带的MI效应从30%大幅提高到65%。这些发现为优化软磁材料的磁性和巨磁阻抗（GMI）效应提供了宝贵的理论见解和实践指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.