Evaluation of the possibility of using PCSS in the microwave compressor circuit

IF 0.4 4区 物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY
V. V. Barmin, I. V. Romanchenko
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引用次数: 0

Abstract

The paper presents practical measurements of scattering parameters of the chamber with a photoconductive semiconductor switch (PCSS) to determine losses and phase shifts. According to measurement results, the usable range for the PCSS chamber reaches 2.27 GHz with respect to losses not exceeding 22% or −1.7 dB. The uniform phase shift ranges from 1.4 to 2.2 GHz. According to the resonant compressor circuit with the T‑junction, the standing wave phase minimum in its side arm is 1.8 GHz. The CST simulation shows the microwave wave compression at a resonant frequency of 3.04 GHz and, however, indicates to large losses in using 3 different types of dielectrics. In theoretical calculations, the microwave attenuation passed through the PCSS model based on the GaAs properties, is 20 dB with regard to losses, whereas in practical measurements, it is 20 dBm and 38.6 dB. The PCSS in the resonant circuit of the compressor with the waveguide chamber, can be used at a frequency not over 2 GHz.

在微波压缩机电路中应用PCSS的可能性评价
本文介绍了用光导半导体开关(PCSS)测量腔室散射参数的实际方法,以确定损耗和相移。根据测量结果,PCSS腔室的可用范围达到2.27 GHz,损耗不超过22%或- 1.7 dB。均匀相移范围为1.4 ~ 2.2 GHz。根据T型结的谐振压缩电路,其侧臂的驻波相位最小值为1.8 GHz。CST模拟结果表明,微波压缩的谐振频率为3.04 GHz,但使用3种不同类型的介质会造成较大的损耗。在理论计算中,通过基于GaAs特性的PCSS模型的微波衰减为20 dB,而在实际测量中,损耗为20 dBm和38.6 dB。带波导腔的压缩机谐振电路中的PCSS,可以在不超过2 GHz的频率下使用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Russian Physics Journal
Russian Physics Journal PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.00
自引率
50.00%
发文量
208
审稿时长
3-6 weeks
期刊介绍: Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.
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