Experimental Evaluation of Relationship Between Radiofrequency Heating Near Implanted Conductive Devices, Scanner-Reported B1+rms, and Transmit Power

IF 6.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
David H. Gultekin;John T. Vaughan;Devashish Shrivastava
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Abstract

Time-varying radiofrequency (RF) fields necessary to perform magnetic resonance imaging (MRI) may induce excessive heating near implanted conductive medical devices during MRI. The time and space-averaged root-mean-square effective magnetic field (B1+rms) and specific absorption rate (SAR) have been proposed as metrics to control the RF-induced heating and avoid unintended thermal injury. We experimentally evaluate the relationship between the RF-induced heating near an implanted conductive medical device, scanner-reported B1+rms, and RF power. RF heating was measured near the electrodes of a commercial deep brain stimulation (DBS) lead placed in a tissue-equivalent gel phantom using fluoroptic temperature probes in a commercial 3T scanner during MRI. Four RF transmit/receive coil combinations were used: a circularly polarized head transmit/receive coil, a 20-channel head/neck, a 32-channel head, or a 64-channel head/neck receive-only coil with a whole-body transmit coil. RF heating was induced by a 2D GRE sequence using two RF pulse types (fast and normal), three flip angles (30°, 60°, and 90°), and turning the receive-only coils off/on. The scanner-reported B1+rms and RF power were recorded. Measurements show that temperature change correlates linearly with both RF power and square of B1+rms for each coil and combination. However, the variation in heating for various RF coils and combinations was much larger for B1+rms compared to RF power. Additional studies across other MR scanners are needed to better understand the extent of variation in RF-induced heating near implanted conductive devices as a function of scanner-reported B1+rms and RF power to develop conservative and reliable patient labeling.
植入导电装置附近射频加热、扫描仪报告的B1+rms和发射功率之间关系的实验评估
执行磁共振成像(MRI)所需的时变射频(RF)场可能在MRI期间在植入的导电医疗设备附近引起过度加热。提出了时间和空间平均均方根有效磁场(B1+rms)和比吸收率(SAR)作为控制射频引起的加热和避免意外热损伤的指标。我们通过实验评估了植入导电医疗设备附近的射频感应加热、扫描仪报告的B1+rms和射频功率之间的关系。在MRI期间,使用商用3T扫描仪中的荧光温度探头,在放置在组织等效凝胶模体中的商业深部脑刺激(DBS)铅的电极附近测量射频加热。使用了四种射频发射/接收线圈组合:圆极化头部发射/接收线圈,20通道头/颈,32通道头,或64通道头/颈接收线圈与全身发射线圈。RF加热由2D GRE序列诱导,使用两种RF脉冲类型(快速和正常),三个翻转角度(30°,60°和90°),并关闭/打开仅接收线圈。记录扫描仪报告的B1+rms和RF功率。测量结果表明,温度变化与RF功率以及每个线圈和组合的B1+rms的平方呈线性相关。然而,与RF功率相比,B1+rms对各种RF线圈和组合的加热变化要大得多。需要对其他MR扫描仪进行进一步的研究,以更好地了解植入导电装置附近RF诱导加热的变化程度,作为扫描仪报告的B1+rms和RF功率的函数,以开发保守和可靠的患者标签。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
10.70
自引率
0.00%
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0
审稿时长
8 weeks
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