A. Moumen , P. Rajabi Kalvani , F. Mattei , G. Foti , A. Parisini , R. Mosca , M. Pavesi , M. Bosi , L. Seravalli , F. Mezzadri , A. Baraldi , P. Mazzolini , S. Vantaggio , A. Bosio , R. Fornari
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引用次数: 0
Abstract
A novel broadband p-n UV photodiode is presented, that integrates an ultrawide band gap n-type κ-Ga2O3 epitaxial film doped with silicon (Si) and a p-type NiO polycrystalline film, to provide a planar NiO/κ-Ga2O3 p-n heterojunction for UV detection applications. The proposed device features a circular design, with a diameter of 240 μm, resulting in compactness and functionality, and represents the first demonstration of broadband UV detection using planar NiO/κ-Ga2O3 photodiodes. It can be operated in self-powered mode, which allows UV detection without use of an external power supply. The p-n photodiode exhibits excellent sensitivity to UVC light and acceptable sensitivity to UVB and UVA radiations. However, the response to UVA light is still weak and requires further optimization of the diode design. Response and recovery time below 0.8 s were observed for all UV illumination range. The presented photodiode has a simple design and shows significant potential in high-performance broadband UV detection in self-powered operation.
期刊介绍:
Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials.
OPTICAL MATERIALS focuses on:
• Optical Properties of Material Systems;
• The Materials Aspects of Optical Phenomena;
• The Materials Aspects of Devices and Applications.
Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.