Structural, Optical, and Electrical Investigations of MgO Nanostructure Under the Pressure Effect

Abstract

MgO nanostructure is prepared using pulsed laser deposition (PLD) at different oxygen pressure. The prepared MgO nanostructure is characterized and analyzed by scanning electron microscopy (SEM), UV–visible (UV–vis) spectrophotometry and electrical characteristics, respectively. The correlation between grain size and pressure is inversely. The structural studies are presented in terms of varying pressures, focusing on the properties of MgO nanostructures at pressures ranging from 50 to 300 mbar. The grain size varies from 12.5 nm at 50 mbar to 3.9 nm at 300 mbar. Additionally, UV–vis optical investigations are conducted to understand the behavior of MgO nanostructures under different pressures. Transmittance is measured between 300 and 1100 nm across different pressures, 50–300 mbar to show high transmittance over 80% at pressures ranging from 200 to 300 mbar. The bandgap investigation, which is related to transmittance, reveals that at 200 mbar, the bandgap exhibits a direct inter-band transition, attributed to non-stoichiometry of the deposited layer. The electrical properties are investigated in terms of I–V, J–V, C–V characteristics, photo-current, short circuit current, open circuit voltage, spectral responsivity, and quantum efficiency.