Advancing Silicon Surface Passivation by Copper Doped Zinc Oxide and Graphene Oxide Nanocomposite Thin Films

IF 2.8 3区材料科学 Q3 CHEMISTRY, PHYSICAL

Silicon Pub Date : 2025-03-11 DOI:10.1007/s12633-025-03282-y

Moez Salem, Amel Haouas, Abdullah Almohammedi, Hajar Ghannam

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引用次数: 0

Abstract

Copper (Cu)-doped Zinc Oxide (ZnO)-Graphene Oxide (GO) nanostructures (0, 0.5, 1, and 2 at.%) were synthesized via hydrothermal methods and deposited on silicon substrates using spin coating. XRD analysis revealed well-crystallized ZnO nanoparticles with crystallite sizes between 79 and 108 nm, while Cu doping induced lattice distortions, reflected by increased microstrain and dislocation density. AFM measurements showed a reduction in surface roughness and improved homogeneity with Cu doping. Optical characterizations indicated a reduction in the band gap (from 3.26 eV to 3.24 eV) and a decrease in photoluminescence intensity of the visible band, suggesting degradation of recombination sites. Reflectance measurements confirmed enhanced light absorption with higher Cu doping. Carrier lifetime increased significantly, reaching 165 μs at 2% Cu doping, highlighting improved charge carrier dynamics. These results demonstrate that Cu-doped ZnO-GO nanocomposites are promising candidates for enhanced surface passivation in silicon-based photovoltaic devices.

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铜掺杂氧化锌和氧化石墨烯纳米复合薄膜对硅表面钝化的研究进展

采用水热法合成了掺杂铜（Cu）的氧化锌(ZnO)-氧化石墨烯（GO）纳米结构（0、0.5、1和2 at.%），并利用自旋涂层将其沉积在硅衬底上。XRD分析表明，ZnO纳米颗粒结晶良好，晶粒尺寸在79 ~ 108 nm之间，而Cu掺杂导致晶格畸变，表现为微应变和位错密度的增加。原子力显微镜测量表明，铜掺杂后表面粗糙度降低，均匀性改善。光学表征表明，带隙减小（从3.26 eV减小到3.24 eV），可见光波段的光致发光强度减小，表明复合位点的降解。反射率测量证实，高铜掺杂增强了光吸收。载流子寿命显著提高，在2% Cu掺杂时达到165 μs，载流子动力学得到改善。这些结果表明，cu掺杂ZnO-GO纳米复合材料是硅基光伏器件中增强表面钝化的有希望的候选材料。

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来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.