{"title":"Exploring Next-Generation TMDC Materials: A Comprehensive Review of Their Classifications, Properties, and Applications","authors":"Vydha Pradeep Kumar, Pratikhay Raut, Deepak Kumar Panda, Ahmed Nabih Zaki Rashed","doi":"10.1007/s12633-025-03274-y","DOIUrl":null,"url":null,"abstract":"<div><p>In the field of nanotechnology, the emergence of TMDC materials has paved the way for the exploration and advancement of various innovative two-dimensional TMDC materials. The distinct physical and chemical characteristics of these materials outperform those of conventional bulk materials, opening up new avenues for study into a range of applications. The key electrical characteristics of TMDC materials are thoroughly covered in this work. Through comparative analysis, it investigates their performance, synthesis, and applications. Additionally, by analysing research trends and possible breakthroughs, the report emphasizes upcoming prospects. The results highlight how widely used TMDCs are in electrical engineering, electronics, and other fields. We have compared their electrical characteristics and performances, consolidating this information for easy reference in future research and analysis. Importantly, we have demonstrated a novel method of proving our theoretical studies with simulation results using a TCAD simulator that, a material behaviour cannot be attributed to a single parameter but rather to a combination of factors including layer thickness, crystal structure, mechanical strain, photon energy, doping, environmental conditions, interactions with other 2D materials, and gate voltage. It is observed from simulation that, the Ion/Ioff current ratio of MoS<sub>2</sub>, WSe<sub>2</sub> and MoTe<sub>2</sub> as 2.25e9, 8.11e8 and 4.93e7. Based on these results and material properties, it is understood these materials can be employed for a variety of purposes due to their distinct features. For example, the direct bandgap and increased electron mobility of MoS<sub>2</sub> material make it suited for optoelectronic applications and high-speed electrical devices. MoTe<sub>2</sub> materials with variable bandgap and anisotropic conductivity, on the other hand, are appealing for flexible electronics, wearable devices, and devices needing directional charge transport. Based on their great compatibility we emphasize the possibility of finding new materials, such as heterostructures with improved properties, by carrying out in-depth research. These developments could have major positive effects on industry and society. By providing a cohesive study of TMDC electrical behaviour and useful simulation techniques, this review fills in gaps in the body of literature and serves as a useful resource for future research.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 6","pages":"1199 - 1221"},"PeriodicalIF":3.3000,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03274-y","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
In the field of nanotechnology, the emergence of TMDC materials has paved the way for the exploration and advancement of various innovative two-dimensional TMDC materials. The distinct physical and chemical characteristics of these materials outperform those of conventional bulk materials, opening up new avenues for study into a range of applications. The key electrical characteristics of TMDC materials are thoroughly covered in this work. Through comparative analysis, it investigates their performance, synthesis, and applications. Additionally, by analysing research trends and possible breakthroughs, the report emphasizes upcoming prospects. The results highlight how widely used TMDCs are in electrical engineering, electronics, and other fields. We have compared their electrical characteristics and performances, consolidating this information for easy reference in future research and analysis. Importantly, we have demonstrated a novel method of proving our theoretical studies with simulation results using a TCAD simulator that, a material behaviour cannot be attributed to a single parameter but rather to a combination of factors including layer thickness, crystal structure, mechanical strain, photon energy, doping, environmental conditions, interactions with other 2D materials, and gate voltage. It is observed from simulation that, the Ion/Ioff current ratio of MoS2, WSe2 and MoTe2 as 2.25e9, 8.11e8 and 4.93e7. Based on these results and material properties, it is understood these materials can be employed for a variety of purposes due to their distinct features. For example, the direct bandgap and increased electron mobility of MoS2 material make it suited for optoelectronic applications and high-speed electrical devices. MoTe2 materials with variable bandgap and anisotropic conductivity, on the other hand, are appealing for flexible electronics, wearable devices, and devices needing directional charge transport. Based on their great compatibility we emphasize the possibility of finding new materials, such as heterostructures with improved properties, by carrying out in-depth research. These developments could have major positive effects on industry and society. By providing a cohesive study of TMDC electrical behaviour and useful simulation techniques, this review fills in gaps in the body of literature and serves as a useful resource for future research.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.