{"title":"High-Temperature Mechanical Properties and Ablation Resistance of 2.5D Shallow Straight-Joint SiO2f/SiO2 Composites","authors":"Xisheng Xia, Jian Duan, Bangxiao Mao, Dakui Wang, Guosheng Gao","doi":"10.1007/s12633-025-03281-z","DOIUrl":null,"url":null,"abstract":"<div><p>In this paper, 2.5D shallow straight-joint SiO<sub>2f</sub>/SiO<sub>2</sub> composites (SST1 ~ SST7) were prepared by the sol–gel method. The effects of different ceramization temperatures on the microstructure, high-temperature flexural properties and ablation resistance of the 2.5D shallow straight-joint SiO<sub>2f</sub>/SiO<sub>2</sub> composites were studied. The fracture and ablation mechanisms of the composites were analyzed in depth, providing theoretical support for the high-performance preparation of SiO<sub>2f</sub>/SiO<sub>2</sub> composites and its stable application in high-temperature environment of aircraft. SST1 ~ SST7 showed different microstructures. The SiO<sub>2</sub> matrix changed from granular to continuous and smooth, and the bonding between the matrix and the fibers gradually becomed stronger. Under the flexural load at 600 ℃, SST1 ~ SST7 exhibited different microstructures and failure mechanisms, which determined the flexural properties at 600 ℃. Among them, SST6 had the best flexural strength (112 MPa) at 600 ℃. Meanwhile, SST6 had the best ablation resistance, with a linear ablation rate of only 2.88 × 10<sup>–2</sup> mm/s. The ablation mechanisms in the ablation centers of SST1 ~ SST6 were all melting and mechanical scouring. However, the ablation mechanism in the ablation center of SST7 were melting, mechanical scouring and mechanical spalling. The ablation mechanisms in the ablation edge areas of SST1 ~ SST7 were all mechanical scouring.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 6","pages":"1439 - 1448"},"PeriodicalIF":3.3000,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03281-z","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, 2.5D shallow straight-joint SiO2f/SiO2 composites (SST1 ~ SST7) were prepared by the sol–gel method. The effects of different ceramization temperatures on the microstructure, high-temperature flexural properties and ablation resistance of the 2.5D shallow straight-joint SiO2f/SiO2 composites were studied. The fracture and ablation mechanisms of the composites were analyzed in depth, providing theoretical support for the high-performance preparation of SiO2f/SiO2 composites and its stable application in high-temperature environment of aircraft. SST1 ~ SST7 showed different microstructures. The SiO2 matrix changed from granular to continuous and smooth, and the bonding between the matrix and the fibers gradually becomed stronger. Under the flexural load at 600 ℃, SST1 ~ SST7 exhibited different microstructures and failure mechanisms, which determined the flexural properties at 600 ℃. Among them, SST6 had the best flexural strength (112 MPa) at 600 ℃. Meanwhile, SST6 had the best ablation resistance, with a linear ablation rate of only 2.88 × 10–2 mm/s. The ablation mechanisms in the ablation centers of SST1 ~ SST6 were all melting and mechanical scouring. However, the ablation mechanism in the ablation center of SST7 were melting, mechanical scouring and mechanical spalling. The ablation mechanisms in the ablation edge areas of SST1 ~ SST7 were all mechanical scouring.
期刊介绍:
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.