Influence of chemical purification methodologies on the Bridgman growth of trans-stilbene (TSB) crystal, and feasibility studies for X-ray imaging and neutron/gamma discrimination applications

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Anjan Pal, Sujan Kar, C. Debnath, S. Raj Mohan, Rijul Roychowdhury, Ashish K. Agrawal,  Sonu, Mohit Tyagi, Sunil Verma
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Abstract

Growth of large size, good optical quality, technologically important organic single crystal of trans-Stilbene (TSB) by Bridgman technique has been reported. To evaluate the influence of chemical purity on the growth process, multiple growth runs were conducted, each using starting materials of varying purity levels. A crack-free, transparent, and colorless crystal was grown using chemical obtained through a meticulous double-purification process involving recrystallization and zone melting. The grown crystal was precisely cut and polished to obtain elements for experimental investigations, targeting applications in X-ray imaging and Pulse Shape Discrimination (PSD). Additional plates were prepared for investigations of phase purity by powder XRD, crystalline perfection by high resolution X-ray diffraction (HRXRD), and optical quality using birefringence interferometry and UV–Vis transmission studies, all pointing towards low defects, and hence good optical quality. The crystal’s optical energy gap was determined to be 3.47 eV by Tauc plot. Photoluminescence (PL) studies using 325 nm excitation revealed a broad emission, with a prominent peak around 380 nm. Time Correlated Single Photon Counting (TCPCS) studies were performed to quantify the decay characteristics of the crystal. The analysis reveals dual decay times of 1.98 ns and 4.14 ns. Importantly, strong scintillation output was measured using X-rays from Indus-2 synchrotron radiation beamline, enabling the resolution of fine object features of as small as 100 µm, highlighting its suitability for X-ray imaging. Furthermore, PSD characterization performed using Am-Be radioactive source confirmed the crystal’s potential for neutron/gamma (n/γ) discrimination applications, making it a promising candidate for advanced technological applications.

化学纯化方法对反式二苯乙烯(TSB)晶体Bridgman生长的影响及其在x射线成像和中子/伽马鉴别应用的可行性研究
用Bridgman技术生长出了大尺寸、光学质量好、具有重要技术意义的反式二苯乙烯(TSB)有机单晶。为了评估化学纯度对生长过程的影响,进行了多次生长运行,每次使用不同纯度的起始材料。一种无裂纹的、透明的、无色的晶体是用经过细致的重结晶和区域熔化双重净化过程获得的化学物质生长出来的。生长的晶体被精确切割和抛光,以获得用于实验研究的元素,目标是在x射线成像和脉冲形状识别(PSD)中的应用。制备了额外的板,用粉末XRD研究相纯度,用高分辨率x射线衍射(HRXRD)研究晶体完美性,用双折射干涉法和紫外-可见透射法研究光学质量,所有这些都指向低缺陷,因此光学质量好。通过Tauc图确定晶体的光能隙为3.47 eV。在325 nm激发下的光致发光(PL)研究显示出宽发射,在380 nm附近有一个突出的峰。时间相关单光子计数(TCPCS)研究了晶体的衰减特性。分析表明双衰减时间分别为1.98 ns和4.14 ns。重要的是,使用来自Indus-2同步辐射光束线的x射线测量了强闪烁输出,使精细物体特征的分辨率小至100 μ m,突出了其对x射线成像的适用性。此外,使用Am-Be放射源进行的PSD表征证实了该晶体在中子/γ (n/γ)识别应用方面的潜力,使其成为先进技术应用的有希望的候选者。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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