Recent advancements and progress in development of ferroelectric field effect transistor: A review

Abstract

The robust application of ferroelectric materials in various disciplines has resulted in the development of significantly more accurate and potent FeFETs, which have the potential to deliver more promising non-volatile memory and synaptic devices than traditional ones. The present study illustrates the fundamental concepts, operation, and construction of FeFETs and presents a methodology to determine suitable ferroelectric materials, the make-up of gate stacks, and the advantages that are necessary for an efficient and commercial FeFET. Among various ferroelectric-based FETs, the HfO₂-based FeEFT has exhibited much more potential and huge advantages such as thin profiles, high polarisation, data retention, and endurance, which have been thoroughly explored in the present study. This paper discusses the contemporary challenges in device design by focusing primarily on the performance parameters such as CMOS compatibility of ferroelectric materials, gate leakage current, depolarisation fields, and a few other factors. Considering these factors will ultimately influence the critical concerns associated with devising design and practical limitations.