Subangstrom ion beam engineering of buried ultrathin oxides for scalable quantum computing

IF 11.7 1区综合性期刊 Q1 MULTIDISCIPLINARY SCIENCES

Science Advances Pub Date : 2025-05-07 DOI:10.1126/sciadv.ads9744

Nikita S. Smirnov, Elizaveta A. Krivko, Daria A. Moskaleva, Dmitry O. Moskalev, Anastasia A. Solovieva, Aleksei R. Matanin, Vladimir V. Echeistov, Аnton I. Ivanov, Elizaveta I. Malevannaya, Viktor I. Polozov, Evgeny V. Zikiy, Nikita D. Korshakov, Maksim I. Teleganov, Dmitry A. Mikhalin, Nikolai M. Zhitkov, Ruslan V. Romashkin, Igor S. Korobenko, Aleksei V. Yanilkin, Аndrey V. Lebedev, Ilya A. Ryzhikov, Aleksander V. Andriyash, Ilya A. Rodionov

{"title":"Subangstrom ion beam engineering of buried ultrathin oxides for scalable quantum computing","authors":"Nikita S. Smirnov, Elizaveta A. Krivko, Daria A. Moskaleva, Dmitry O. Moskalev, Anastasia A. Solovieva, Aleksei R. Matanin, Vladimir V. Echeistov, Аnton I. Ivanov, Elizaveta I. Malevannaya, Viktor I. Polozov, Evgeny V. Zikiy, Nikita D. Korshakov, Maksim I. Teleganov, Dmitry A. Mikhalin, Nikolai M. Zhitkov, Ruslan V. Romashkin, Igor S. Korobenko, Aleksei V. Yanilkin, Аndrey V. Lebedev, Ilya A. Ryzhikov, Aleksander V. Andriyash, Ilya A. Rodionov","doi":"10.1126/sciadv.ads9744","DOIUrl":null,"url":null,"abstract":"<div >Multilayer nanoscale systems incorporating ultrathin tunnel barriers, magnetic materials, amorphous oxides, and promising dielectrics are essential for next-generation logics, memory, quantum, and neuro-inspired computing. Still, an ultrathin film control at the atomic scale remains challenging. Here, we introduce a complementary metal-oxide semiconductor–compatible approach using focused ion beam irradiation for buried ultrathin films’ engineering with subangstrom thickness control. Molecular dynamics simulations confirm the pivotal role of ion-induced crystal defects. Its performance is exemplified by Josephson junction resistance tuning in the range of 2 to 37% with a 0.86% standard deviation in completed chips. Furthermore, it enables ±17-megahertz frequency accuracy (±0.172 angstrom tunnel barrier thickness variation) in superconducting multiqubit processors, as well as qubit energy relaxation and echo coherence times exceeding 0.5 milliseconds.</div>","PeriodicalId":21609,"journal":{"name":"Science Advances","volume":"11 19","pages":""},"PeriodicalIF":11.7000,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.science.org/doi/reader/10.1126/sciadv.ads9744","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science Advances","FirstCategoryId":"103","ListUrlMain":"https://www.science.org/doi/10.1126/sciadv.ads9744","RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}

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Abstract

Multilayer nanoscale systems incorporating ultrathin tunnel barriers, magnetic materials, amorphous oxides, and promising dielectrics are essential for next-generation logics, memory, quantum, and neuro-inspired computing. Still, an ultrathin film control at the atomic scale remains challenging. Here, we introduce a complementary metal-oxide semiconductor–compatible approach using focused ion beam irradiation for buried ultrathin films’ engineering with subangstrom thickness control. Molecular dynamics simulations confirm the pivotal role of ion-induced crystal defects. Its performance is exemplified by Josephson junction resistance tuning in the range of 2 to 37% with a 0.86% standard deviation in completed chips. Furthermore, it enables ±17-megahertz frequency accuracy (±0.172 angstrom tunnel barrier thickness variation) in superconducting multiqubit processors, as well as qubit energy relaxation and echo coherence times exceeding 0.5 milliseconds.

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用于可扩展量子计算的埋藏超薄氧化物亚埃离子束工程

多层纳米级系统包含超薄隧道屏障、磁性材料、非晶氧化物和有前途的电介质，对于下一代逻辑、存储、量子和神经启发计算至关重要。然而，在原子尺度上控制超薄薄膜仍然具有挑战性。本文介绍了一种利用聚焦离子束辐照的互补金属氧化物半导体兼容方法，用于亚埃厚度控制的埋地超薄膜工程。分子动力学模拟证实了离子诱导晶体缺陷的关键作用。在完成的芯片中，约瑟夫森结电阻调谐范围为2至37%，标准差为0.86%，证明了其性能。此外，它可以在超导多量子位处理器中实现±17兆赫的频率精度（±0.172埃隧道势垒厚度变化），以及量子位能量松弛和回声相干时间超过0.5毫秒。

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来源期刊

Science Advances 综合性期刊-综合性期刊

CiteScore

21.40

自引率

1.50%

发文量

1937

审稿时长

29 weeks

期刊介绍： Science Advances, an open-access journal by AAAS, publishes impactful research in diverse scientific areas. It aims for fair, fast, and expert peer review, providing freely accessible research to readers. Led by distinguished scientists, the journal supports AAAS's mission by extending Science magazine's capacity to identify and promote significant advances. Evolving digital publishing technologies play a crucial role in advancing AAAS's global mission for science communication and benefitting humankind.