Platelet graphene nanofiber growth on rice husk-sourced SiO2-coated substrates and their behavior in PVA-based temperature sensing devices

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-05-02 DOI:10.1016/j.sna.2025.116657

Kauê Rigolo , Filipe Suzuki R , Dhivakar Rajendran , Olfa Kanoun , José Mauricio Rosolen

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Abstract

Platelet graphene nanofibers (PGNFs) with diameter ranging from a few nanometers to several hundred nanometers and length extending into the micrometer scale were grown on rice husk-derived C-SiO₂ via chemical vapor deposition (CVD) in the presence of a Co/Mn catalyst and ethanol vapor at 650 °C. At this temperature, PGNF formation was sensitive to the carbon concentration in the growth atmosphere. The Co/Mn catalyst, the growth atmosphere, and the C-SiO₂ surface determined PGNF formation. The C-SiO₂/PGNF micro/nanostructured composite material was characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), thermogravimetric analysis (TGA), and X-ray diffraction (XRD). The material was incorporated into polyvinyl alcohol (PVA), and PVA-C-SiO₂/PGNF discs with diameter of 7 mm were placed on Ag/Kapton foil electrodes to create temperature sensors. The temperature coefficient of resistance (TCR) of the sensors depended on the PGNF concentration and ranged from −0.66 to −0.41 %/°C for 5 wt% C-SiO₂/PGNFs and 0.5 wt% C-SiO₂/PGNFs, respectively. On the basis of these results, C-SiO₂/PGNFs can serve as an alternative additive to develop PVA-based plastic temperature sensors with enhanced thermal stability.

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稻壳源sio2包覆基底上血小板石墨烯纳米纤维的生长及其在聚乙烯醇基温度传感器件中的行为

采用化学气相沉积（CVD）的方法，在650℃的Co/Mn催化剂和乙醇蒸气存在下，在稻壳衍生的C- sio2上生长出了直径从几纳米到几百纳米、长度达到微米级的片状石墨烯纳米纤维（PGNFs）。在此温度下，PGNF的形成对生长大气中的碳浓度敏感。Co/Mn催化剂、生长气氛和C-SiO2表面决定了PGNF的形成。采用扫描电镜（SEM）、高分辨率透射电镜（HRTEM）、热重分析（TGA）和x射线衍射（XRD）对C-SiO2/PGNF微纳米结构复合材料进行了表征。将该材料掺入聚乙烯醇（PVA）中，将直径为7 mm的PVA- c - sio2 /PGNF圆盘放置在Ag/Kapton箔电极上，形成温度传感器。对于5个 wt% C- sio2 /PGNF和0.5 wt% C- sio2 /PGNF，传感器的电阻温度系数（TCR）分别为- 0.66 ~ - 0.41 %/°C。基于这些结果，C-SiO2/PGNFs可以作为一种替代添加剂，用于开发具有增强热稳定性的pva基塑料温度传感器。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...