Crystal Structure Analysis of Epitaxial Nanoheterostructures with Multiple Pseudomorphic Quantum Wells {InхGa\(_{{{\mathbf{1}}-x}}\)As/GaAs} on GaAs (100), (110), and (111)А Substrates

IF 0.6 4区材料科学 Q4 CRYSTALLOGRAPHY

Crystallography Reports Pub Date : 2025-05-05 DOI:10.1134/S1063774524602764

E. A. Klimov, A. N. Klochkov, S. S. Pushkarev

引用次数: 0

Abstract

The crystal structures of the epitaxial multilayer films {In_0.1Ga_0.9As/GaAs} × 10 and {In_0.2Ga_0.8As/GaAs} × 10 grown on GaAs substrates with different orientations, (100), (110), and (111)А, were studied in order to elucidate specific features, which can be related to the previously found efficiency of the terahertz emission generation in films with (110) and (111)А orientations. Significant concentrations of twins and stacking faults were found on non-standard GaAs (110) and (111)А substrates. The composition and thickness of individual layers of heterostructures on GaAs (100) substrates were refined based on the analysis of interference oscillations in X-ray diffraction curves.

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具有多个伪晶量子阱的外延纳米异质结构的晶体结构分析Inх{Ga\(_{{{\mathbf{1}}-x}}\) GaAs (100), (110), （111）А衬底}上的As/GaAs

研究了生长在不同取向（100）、（110）和（111）А的GaAs衬底上的外延多层膜{In0.1Ga0.9As/GaAs} × 10和{In0.2Ga0.8As/GaAs} × 10的晶体结构，以阐明其具体特征，这些特征可能与先前发现的（110）和（111）А取向薄膜的太赫兹发射效率有关。在非标准GaAs（110）和（111）А衬底上发现了显著浓度的孪晶和层错。通过x射线衍射曲线的干涉振荡分析，确定了GaAs（100）衬底上各层异质结构的组成和厚度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Crystallography Reports 化学-晶体学

CiteScore

1.10

自引率

28.60%

发文量

审稿时长

4-8 weeks

期刊介绍： Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.