Structural, XPS, morphological and optical properties of annealed earth-abundant Cu2ZnSnS4 thin films grown by one step thermal evaporation

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-05-06 DOI:10.1016/j.mseb.2025.118389

L. Achour , N. Khemiri , M.A. Nasiri , A. Cantarero

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Abstract

In this paper, we have conducted several characterizations on CZTS thin films grown by thermal evaporation from calcined and non-calcined powder and vacuum annealed at 200 °C and 250 °C. Different characterizations were used to investigate the effect of powder calcination and annealing on the properties of CZTS. Structural analysis reveals that all the prepared CZTS films have a kesterite structure with a preferential orientation along the (1 1 2) plane and an improvement of crystalline quality by using calcined powder. XPS results show a transition of the oxidation states from +2 to +4 for Sn and from +2 to +1 for Cu. These transitions occur for the samples elaborated from calcined powder at 900 °C. All samples exhibited a high absorption coefficient (10⁴ cm⁻¹). The optical band gaps of samples elaborated from uncalcined powder were 1.63 and 1.58 eV, whereas those of samples elaborated from calcined powder were 1.52 and 1.42 eV.

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一步热蒸发法制备富土Cu2ZnSnS4退火薄膜的结构、XPS、形貌和光学性能

在本文中，我们对煅烧和未煅烧粉末在200°C和250°C真空退火下热蒸发生长的CZTS薄膜进行了几种表征。采用不同的表征方法研究了粉末煅烧和退火对CZTS性能的影响。结构分析表明，所制备的CZTS薄膜均具有沿（11 - 12）平面优先取向的kesterite结构，并且通过使用煅烧粉末改善了晶体质量。XPS结果表明，Sn的氧化态由+2变为+4，Cu的氧化态由+2变为+1。这些转变发生在900°C煅烧粉末制备的样品中。所有样品均表现出较高的吸收系数（104 cm−1）。未煅烧粉末制备的样品的光学带隙分别为1.63和1.58 eV，而煅烧粉末制备的样品的光学带隙分别为1.52和1.42 eV。

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.