Low-temperature-deposited quaternary ZnO-based transparent conducting oxide and their application to kesterite thin film solar cells

IF 6.3 2区材料科学 Q2 ENERGY & FUELS

Solar Energy Materials and Solar Cells Pub Date : 2025-05-03 DOI:10.1016/j.solmat.2025.113679

Youseong Park , Jun Sung Jang , Vijay C. Karade , Hojun Choi , Mingrui He , Mahesh P. Suryawanshi , Suyoung Jang , Eunjin Jo , Myeong Gil Gang , Seung Wook Shin , Jin Hyeok Kim

{"title":"Low-temperature-deposited quaternary ZnO-based transparent conducting oxide and their application to kesterite thin film solar cells","authors":"Youseong Park , Jun Sung Jang , Vijay C. Karade , Hojun Choi , Mingrui He , Mahesh P. Suryawanshi , Suyoung Jang , Eunjin Jo , Myeong Gil Gang , Seung Wook Shin , Jin Hyeok Kim","doi":"10.1016/j.solmat.2025.113679","DOIUrl":null,"url":null,"abstract":"<div><div>Aluminum-doped ZnO (AZO) is widely used as a transparent conducting oxide (TCO) in various optoelectronic devices owing to its low-cost, nontoxicity, and excellent electrical and optical properties. However, the high substrate temperature or relatively narrow band gap energy (E<sub>g</sub>) of AZO-based TCO in optoelectronic devices may significantly degrade and/or limit device performance. Accordingly, present study systematically investigates low-temperature deposition of Mg and Ga co-doped ZnO (MGZO)-based TCO with variable E<sub>g</sub> and their application in kesterite thin-film solar cells (TFSCs). An investigation reveals that the MGZO thin films exhibited better crystallinity, larger grains, and enhanced optoelectronic properties than that of the AZO thin films, such as sheet resistance of less than 8 Ω/sq and mobility of more than 27 cm<sup>2</sup>/Vs even at low substrate temperatures. In addition, the kesterite TFSC with MGZO deposited at a lower substrate temperature, demonstrated the improved absolute device efficiency of 1.37 %, along with enhanced carrier collection, and long-term stability than that of conventional AZO. This study introduces an efficient strategy to develop alternative AZO TCOs using combination of simple doping and low deposition temperature and offers methods to improve the power conversion efficiency of kesterite-based TFSCs.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"289 ","pages":"Article 113679"},"PeriodicalIF":6.3000,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Energy Materials and Solar Cells","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927024825002806","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENERGY & FUELS","Score":null,"Total":0}

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Abstract

Aluminum-doped ZnO (AZO) is widely used as a transparent conducting oxide (TCO) in various optoelectronic devices owing to its low-cost, nontoxicity, and excellent electrical and optical properties. However, the high substrate temperature or relatively narrow band gap energy (E_g) of AZO-based TCO in optoelectronic devices may significantly degrade and/or limit device performance. Accordingly, present study systematically investigates low-temperature deposition of Mg and Ga co-doped ZnO (MGZO)-based TCO with variable E_g and their application in kesterite thin-film solar cells (TFSCs). An investigation reveals that the MGZO thin films exhibited better crystallinity, larger grains, and enhanced optoelectronic properties than that of the AZO thin films, such as sheet resistance of less than 8 Ω/sq and mobility of more than 27 cm²/Vs even at low substrate temperatures. In addition, the kesterite TFSC with MGZO deposited at a lower substrate temperature, demonstrated the improved absolute device efficiency of 1.37 %, along with enhanced carrier collection, and long-term stability than that of conventional AZO. This study introduces an efficient strategy to develop alternative AZO TCOs using combination of simple doping and low deposition temperature and offers methods to improve the power conversion efficiency of kesterite-based TFSCs.

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低温沉积季铵盐基透明导电氧化物及其在硅钙石薄膜太阳能电池中的应用

铝掺杂ZnO （AZO）由于其低成本、无毒、优异的电学和光学性能，被广泛用作透明导电氧化物（TCO），应用于各种光电子器件中。然而，光电器件中基于azo的TCO的高衬底温度或相对较窄的带隙能量（Eg）可能会显著降低和/或限制器件性能。因此，本研究系统地研究了Mg和Ga共掺杂ZnO （MGZO）基可变Eg的低温沉积及其在kesterite薄膜太阳能电池（TFSCs）中的应用。研究表明，MGZO薄膜比AZO薄膜具有更好的结晶度、更大的晶粒和更强的光电性能，即使在较低的衬底温度下，薄膜电阻也小于8 Ω/sq，迁移率也大于27 cm2/Vs。此外，在较低的衬底温度下沉积MGZO的kesterite TFSC，与传统AZO相比，绝对器件效率提高了1.37%，载流子收集能力增强，长期稳定性也有所提高。本研究介绍了一种利用简单掺杂和低沉积温度相结合的方法来开发替代AZO tco的有效策略，并提供了提高kester酸盐基TFSCs功率转换效率的方法。

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来源期刊

Solar Energy Materials and Solar Cells 工程技术-材料科学：综合

CiteScore

12.60

自引率

11.60%

发文量

513

审稿时长

47 days

期刊介绍： Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.