A D-Band Low-Noise Amplifier With Gm-Boosting Technique Based on Asymmetric Coupling

IF 4 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2025-03-27 DOI:10.1109/TCSII.2025.3555310

Yun Qian;Yizhu Shen;Yifan Ding;Sanming Hu

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Abstract

This brief presents a D-band low noise amplifier (LNA) in a 40 nm bulk CMOS process. The proposed LNA includes five stages of single-ended common-gate amplifiers. The input and interstage matching networks are realized by asymmetric transformers, which effectively enhance the equivalent transconductance

$(g_{m})$

of the subsequent transistor. The asymmetric transformer features the segmented structure, offering enhanced design flexibility, and exhibits characteristics of low loss and low parasitic parameters, enabling broadband matching. Leveraging the asymmetric transformer, the LNA achieves simultaneous matching of impedance and noise. The measured power gain is 18.4 dB, with a 3-dB bandwidth of 26.8 GHz from 139.9 to 166.7 GHz. Within the effective bandwidth, the measured minimum noise figure is 5.7 dB. The LNA operates with a power consumption of 17.3 mW under a 0.9 V supply, featuring a total area of

$0.184~{\mathrm {mm}}^{2}$

and a core area of 0.062 mm2.

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基于非对称耦合的gm增强技术的d波段低噪声放大器

本文介绍了一种40纳米体CMOS工艺的d波段低噪声放大器（LNA）。所提出的LNA包括5级单端共门放大器。输入和级间匹配网络采用非对称变压器实现，有效提高了后续晶体管的等效跨导$(g_{m})$。非对称变压器具有分段结构，提供增强的设计灵活性，并具有低损耗和低寄生参数的特点，可实现宽带匹配。利用非对称变压器，LNA实现了阻抗和噪声的同时匹配。测量功率增益为18.4 dB， 3db带宽为26.8 GHz, 139.9 ~ 166.7 GHz。在有效带宽内，测量到的最小噪声系数为5.7 dB。LNA在0.9 V电源下的功耗为17.3 mW，总面积为$0.184~{\ mathm {mm}}^{2}$，核心面积为0.062 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程：电子与电气

CiteScore

7.90

自引率

20.50%

发文量

883

审稿时长

3.0 months

期刊介绍： TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.