Zhongxiang Yuan , Xiaoqing Li , Ziyu Xiao , Zhengguang Zhang , Shuliu Zhou , Cailin Hong , Xuedong Chen , Lizhan Zeng , Yunlong Wang , Jiulin Wu
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引用次数: 0
Abstract
Due to their exceptional resolution, rapid response, and versatility, piezoelectric actuators (PEAs) find extensive application in high-end fields such as nano-positioning, semiconductor manufacturing, and space exploration. However, the nonlinear effects associated with creep significantly restrict the full performance potential of PEAs under extreme conditions. To address this limitation, we propose a fractional calculus-based model that effectively captures the multi-scale and complex dynamics of creep phenomena. This model incorporates only two unknown parameters, thereby simplifying the parameter identification process. Through comprehensive theoretical analysis, simulation, and experimental validation, our model has demonstrated considerable advantages in terms of accuracy and applicability, with relative error in both the frequency and time domains below 6 %. The proposed fractional creep model and its associated parameter identification technique are anticipated to enhance the long-term precision of PEAs, paving the way for future advancements in ultra-high-precision actuation technology.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...