Monolithic 960/1000 nm Bicolor Semiconductor Disk Laser Delivers a Brightness of Over 300 MW/cm2sr

Abstract

High-brightness dual-color sources are highly prized in the plethora of nascent applications. Here, we expound upon a new theoretical design and experimental examinations for the attainment of a bicolor semiconductor disk laser. Numerical investigations are conducted in detail, disclosing that the dual-color gain with a separation spanning several tens of nanometers can be actualized via the accurate manipulation of the temperature-dependent quantum wells (QWs) gain-filtering and the disk microcavity-filtering. Employing this strategy, a 960/1000 nm gain chip is engineered. The experimental outcomes evinced that the emission wavelength can be adroitly shifted by governing the pump power or temperature. During the dual-wavelength operation, a near-diffraction-limited power of 3.8 W is procured, the beam quality factor M² is in the vicinity of 1.1, and the brightness reaches approximately 310 MW/cm²sr. The quasi-continuous wave performances are also appraised under a duty cycle of approximately 10%. A pulse energy of 0.85 mJ and a peak brightness of around 0.75 GW/cm²sr is attained. Moreover, the dual-wavelength stability and synchronization are also corroborated. Overall, these investigative undertakings substantially augment the performance gamut of semiconductor lasers and can be construed as elongation and augmentation of the antecedent works in this discipline.