Electric Field-Induced Perpendicular Magnetization Switching via Piezostrain-Mediated Orbital Reconfiguration in RKKY-Interacted Multilayers for Encrypted Memory and Complementary Logics

IF 19 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Boyi Wang, Li Deng, Lei Ding, Lingyi Shi, Ronggui Zhu, Fei Meng, Chun Feng, Yi Cao, Xianmin Zhang, Guanghua Yu
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Abstract

The control of magnetization by an electric field is one of the most promising solutions for future energy-efficient memory storage and processors beyond current cutting-edge spin-torque-based devices. However, it is difficult to achieve fully electric field-induced deterministic magnetization switching, as electric fields cannot break the time-reversal symmetry in a single ferromagnet. In this work, a novel magnetization control strategy is proposed involving two coupled out-of-plane magnetic layers of (Pt/Co)2/Ru/(Co/Pt)2 with a strain-tunable Ruderman–Kittel–Kasuya–Yosida interaction between the antiferromagnetic and ferromagnetic coupling states. Fully electric field-induced nonvolatile perpendicular magnetization switching of the upper (Co/Pt)2 free layer is obtained, where the bottom (Pt/Co)2 is a preset fixed layer that determines the switching sense of the upper (Co/Pt)2 free layer under identical applied electric field. On this basis, this work demonstrates the potential functions of this process for encrypted memory and complementary Boolean logic gates. Both X-ray absorption spectroscopy and first-principles calculations confirm that this effect arises from the strain-mediated orbital reconfiguration of Co and its controlled overlap of localized and conductive electrons. These findings provide a feasible solution for pure electric field-controlled spintronic devices, as well as helping to enrich the field of strain-related orbital physics.

Abstract Image

Abstract Image

基于压电应变介导轨道重构的rkkey相互作用多层层的电场诱导垂直磁化开关,用于加密存储和互补逻辑
电场磁化控制是未来节能存储器存储和处理器最有前途的解决方案之一,超越了当前尖端的基于自旋扭矩的设备。然而,由于电场不能破坏单个铁磁体的时间反转对称性,因此很难实现完全电场诱导的确定性磁化开关。在这项工作中,提出了一种新的磁化控制策略,涉及(Pt/Co)2/Ru/(Co/Pt)2的两个耦合面外磁层,在反铁磁和铁磁耦合态之间具有应变可调的Ruderman-Kittel-Kasuya-Yosida相互作用。得到了上(Co/Pt)2自由层的全电场诱导非易失性垂直磁化开关,其中下(Pt/Co)2为预设的固定层,该固定层决定了上(Co/Pt)2自由层在相同外加电场下的开关感。在此基础上,本工作展示了该过程在加密存储器和互补布尔逻辑门方面的潜在功能。x射线吸收光谱和第一性原理计算都证实了这种效应是由Co的应变介导的轨道重构及其控制的局域电子和导电电子的重叠引起的。这些发现为纯电场控制自旋电子器件提供了可行的解决方案,也有助于丰富应变相关轨道物理领域。
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来源期刊
Advanced Functional Materials
Advanced Functional Materials 工程技术-材料科学:综合
CiteScore
29.50
自引率
4.20%
发文量
2086
审稿时长
2.1 months
期刊介绍: Firmly established as a top-tier materials science journal, Advanced Functional Materials reports breakthrough research in all aspects of materials science, including nanotechnology, chemistry, physics, and biology every week. Advanced Functional Materials is known for its rapid and fair peer review, quality content, and high impact, making it the first choice of the international materials science community.
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