Electric Field-Induced Perpendicular Magnetization Switching via Piezostrain-Mediated Orbital Reconfiguration in RKKY-Interacted Multilayers for Encrypted Memory and Complementary Logics
Boyi Wang, Li Deng, Lei Ding, Lingyi Shi, Ronggui Zhu, Fei Meng, Chun Feng, Yi Cao, Xianmin Zhang, Guanghua Yu
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引用次数: 0
Abstract
The control of magnetization by an electric field is one of the most promising solutions for future energy-efficient memory storage and processors beyond current cutting-edge spin-torque-based devices. However, it is difficult to achieve fully electric field-induced deterministic magnetization switching, as electric fields cannot break the time-reversal symmetry in a single ferromagnet. In this work, a novel magnetization control strategy is proposed involving two coupled out-of-plane magnetic layers of (Pt/Co)2/Ru/(Co/Pt)2 with a strain-tunable Ruderman–Kittel–Kasuya–Yosida interaction between the antiferromagnetic and ferromagnetic coupling states. Fully electric field-induced nonvolatile perpendicular magnetization switching of the upper (Co/Pt)2 free layer is obtained, where the bottom (Pt/Co)2 is a preset fixed layer that determines the switching sense of the upper (Co/Pt)2 free layer under identical applied electric field. On this basis, this work demonstrates the potential functions of this process for encrypted memory and complementary Boolean logic gates. Both X-ray absorption spectroscopy and first-principles calculations confirm that this effect arises from the strain-mediated orbital reconfiguration of Co and its controlled overlap of localized and conductive electrons. These findings provide a feasible solution for pure electric field-controlled spintronic devices, as well as helping to enrich the field of strain-related orbital physics.
期刊介绍:
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