m-MTDATA:WSe2:Alq3 Nanocomposite-Based Broadband Photodetector

IF 2.2 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Sensors Letters Pub Date : 2025-04-14 DOI:10.1109/LSENS.2025.3560538

Tulika Bajpai;Shweta Tripathi

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引用次数: 0

Abstract

The authors demonstrate a high response broad band photodetector using poly(3,4-ethylenedioxythiophene):polystyrene sulfonate as hole transport layer, 4,4′,4″-tris(3-methylphenylphenylamino) triphenylamine (m-MTDATA), tris(8-hydroxyquinoline) aluminum (III) (Alq₃), and Tungsten di-selenide (WSe₂) material-based nanocomposite (NC) film working as an active layer prepared through dispersion method. The photodetector is fabricated on an ITO-coated glass substrate. A spin coater is utilized for the film (NC) deposition, followed by aluminum (Al) electrode deposition in a thermal evaporation unit. The proposed structure Al/m-MTDATA:WSe₂:Alq₃/ITO-coated glass-based broadband photodetector exhibits a broad photo response with maximum responsivity

${{{\bm{R}}}_{\bm{S}}}$

(A/W) of 523, 550, and 430 A/W; at 350 nm (UV), 550 nm (visible), and 850 nm (IR) at +1V bias. The device possesses the rise/fall time of 4.11 μs/2.55 μs at 350 nm, 0.27 μs/0.33 μs at 550 nm, and 1.17 μs/1.16 μs at 850 nm. The proposed organic–inorganic NC has encouraging properties for optoelectronic applications.

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m-MTDATA:WSe2:Alq3纳米复合材料宽带光电探测器

以聚（3,4-乙烯二氧噻吩）为空穴传输层，4,4 '，4″-三（3-甲基苯基苯基苯胺）三苯胺（m-MTDATA），三（8-羟基喹啉）铝（III）（Alq3）和二硒化钨（WSe2）材料基纳米复合材料（NC）薄膜作为活性层，采用分散法制备了高响应的宽带光电探测器。光电探测器是在ito涂层玻璃基板上制造的。旋转涂布机用于薄膜（NC）沉积，然后在热蒸发单元中沉积铝（Al）电极。本文提出的Al/m-MTDATA:WSe2:Alq3/ ito涂层玻璃基宽带光电探测器具有较宽的光响应，最大响应度${{{\bm{R}}}_{\bm{S}} $ （a /W）分别为523、550和430 a /W；在+1V偏置下，在350 nm (UV), 550 nm（可见光）和850 nm （IR）下。器件在350 nm处上升/下降时间为4.11 μs/2.55 μs，在550 nm处上升/下降时间为0.27 μs/0.33 μs，在850 nm处上升/下降时间为1.17 μs/1.16 μs。所提出的有机-无机NC具有令人鼓舞的光电应用特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Sensors Letters Engineering-Electrical and Electronic Engineering

CiteScore

3.50

自引率

7.10%

发文量

194