Investigation of vacancy defects in CdSiO3:Ce using positron annihilation and coincidence Doppler broadening spectroscopy

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-04-29 DOI:10.1016/j.mseb.2025.118369

Mahdi Ghasemifard , Misagh Ghamari , Cengiz Okay

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引用次数: 0

Abstract

This study explores the defect structure of cerium-doped cadmium metasilicate (CdSiO₃:Ce) using positron annihilation spectroscopy (PAS) and coincidence Doppler broadening spectroscopy (CDBS). The impact of Ce doping on the defect landscape of CdSiO₃ was investigated by analyzing the evolution of vacancy-type defects with varying Ce concentrations. Both PAS and CDBS were conducted, employing a specialized coincidence detection system to minimize background gamma-ray interference in Doppler broadening spectroscopy. This enabled the examination of high-momentum valence electrons during positron annihilation in the Cd_(1-x)SiO₃:Ce_x structure (where x = 0.00, 0.03, 0.05, 0.07 mol %). Our results reveal an initial decrease in defect concentration, particularly volume defects, as the Ce concentration increases to 0.05 mol%. This decrease is attributed to substituting Ce for Cd, leading to a reduction in vacancy formation. However, further increases in Ce concentration reduce the number of vacancy-type defects, suggesting a complex interplay between doping and defect formation mechanisms.

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CdSiO3:Ce中空位缺陷的正电子湮灭与重合多普勒展宽光谱研究

利用正电子湮没光谱（PAS）和重合多普勒展宽光谱（CDBS）研究了掺铈偏硅酸镉（CdSiO3:Ce）的缺陷结构。通过分析不同Ce浓度下空位型缺陷的演变，研究了Ce掺杂对CdSiO3缺陷形貌的影响。PAS和CDBS都进行了研究，采用了专门的重合检测系统来减少多普勒增宽光谱中的背景伽马射线干扰。这使得在Cd(1-x)SiO3:Cex结构（其中x = 0.00, 0.03, 0.05, 0.07 mol %）中正电子湮灭过程中的高动量价电子得以检测。我们的研究结果表明，当Ce浓度增加到0.05 mol%时，缺陷浓度，特别是体积缺陷的浓度开始下降。这种减少是由于用Ce取代Cd，导致空位形成减少。然而，Ce浓度的进一步增加减少了空位型缺陷的数量，表明掺杂与缺陷形成机制之间存在复杂的相互作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.