Evaluation method and system for the influence level of non-thermal effect of strong microwave electric field on dielectric properties of semiconductor materials

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-26 DOI:10.1016/j.sna.2025.116591

Yong Gao , Yi Zhang , Jiawei Long , Chong Gao , Yunpeng Zhang , Chengyong Yu , En Li

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Abstract

Strong microwave electric fields cause a nonlinear evolution of the dielectric properties of semiconductor materials, which can lead to instability or even failure of the circuits and systems in which they are applied. It is shown that the nonlinear evolution phenomenon is closely related to the non-thermal effect of strong microwave electric field. In this paper, a quantitative measurement method and system of the degree of non-thermal effects on semiconductor materials are proposed to test the non-thermal effect under the strong microwave electric field. The proposed measurement system is based on double-cavity structure, and it extracts and quantifies the non-thermal effect influence by controlling the thermal effect influence level of strong microwave electric field. In addition, a small-sample pattern matching algorithm is proposed based on the constructed measurement system, which can satisfy both the small amount of perturbation of the sample to be tested to the strong microwave electric field environment and the requirement of high accuracy for dielectric property testing. Finally, an experimental study was carried out on typical semiconductor materials, and the experimental results reveal that the non-thermal effect of a strong microwave electric field has a significant and cumulative impact on the real part of the dielectric constant of the semiconductor material, while it exhibits a minimal effect on the dielectric loss.

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强微波电场非热效应对半导体材料介电性能影响程度的评价方法与体系

强微波电场引起半导体材料介电特性的非线性演变，这可能导致应用于它们的电路和系统的不稳定甚至失效。结果表明，这种非线性演化现象与强微波电场的非热效应密切相关。本文提出了一种半导体材料非热效应程度的定量测量方法和系统，用于测试强微波电场作用下半导体材料的非热效应。该测量系统基于双腔结构，通过控制强微波电场的热效应影响程度，提取并量化非热效应影响。此外，基于所构建的测量系统，提出了一种小样本模式匹配算法，该算法既能满足被测样品对强微波电场环境的微小扰动，又能满足介电性能测试的高精度要求。最后，对典型半导体材料进行了实验研究，实验结果表明，强微波电场的非热效应对半导体材料介电常数实部有显著的累积影响，而对介电损耗的影响很小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...