J. B. Kronenberg;N. J. Pieper;Y. Xiong;C. N. Nuñez Sanchez;D. R. Ball;B. L. Bhuva
{"title":"Single-Event Responses of Dual- and Triple-Well Designs at the 5-nm Bulk FinFET Node","authors":"J. B. Kronenberg;N. J. Pieper;Y. Xiong;C. N. Nuñez Sanchez;D. R. Ball;B. L. Bhuva","doi":"10.1109/TNS.2025.3545001","DOIUrl":null,"url":null,"abstract":"Triple-well designs are used to isolate substrate current and the resultant noise, across well regions, yielding excellent noise isolation in mixed-signal circuits. However, the presence of a deep-n-well significantly affects charge collection after a single-event (SE) strike. In this work, identical dual- and triple-well designs are evaluated using a wide range of particle linear-energy transfer (LET) values to elucidate underlying mechanisms affecting charge collection at advanced fin field-effect transistor (FinFET) technologies. Results show that SE cross sections for dual-well technology are significantly higher than that for triple-well technology at the 5-nm bulk FinFET node. Technology computer-aided design (TCAD) simulations are carried out to compare charge collection due to the drift process, diffusion process, and parasitic bipolar junction transistors (BJTs). Results show that the absence of a parasitic n-p-n BJT and the differences in the track length affecting the diffusion process are responsible for the differences in SE cross sections.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1358-1364"},"PeriodicalIF":1.9000,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10900611/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Triple-well designs are used to isolate substrate current and the resultant noise, across well regions, yielding excellent noise isolation in mixed-signal circuits. However, the presence of a deep-n-well significantly affects charge collection after a single-event (SE) strike. In this work, identical dual- and triple-well designs are evaluated using a wide range of particle linear-energy transfer (LET) values to elucidate underlying mechanisms affecting charge collection at advanced fin field-effect transistor (FinFET) technologies. Results show that SE cross sections for dual-well technology are significantly higher than that for triple-well technology at the 5-nm bulk FinFET node. Technology computer-aided design (TCAD) simulations are carried out to compare charge collection due to the drift process, diffusion process, and parasitic bipolar junction transistors (BJTs). Results show that the absence of a parasitic n-p-n BJT and the differences in the track length affecting the diffusion process are responsible for the differences in SE cross sections.
期刊介绍:
The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.
The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.