Luminescence studies on SrBi2Ta2O9: Ho3+/Yb3+ phosphors for temperature sensing and optoelectronic devices applications

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Pooja Rohilla , Sheetal Kumari , Anu , Srinibas Barik , Kaushal Kumar , Gufran Ahmad , A.S. Rao , Aman Prasad
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Abstract

SrBi2Ta2O9: Ho3+/Yb3+ phosphors were synthesised using a solid-state reaction method. The samples have an Aba2 space group and an orthorhombic structure. The band gaps of the Ho3+/Yb3+ co-doped phosphors lie within the range of 4.67–4.71 eV. Under UV excitation, singly Ho3+ doped phosphors emit green color at 546 nm. Under 980 nm excitation, the SrBi2Ta2O9 phosphors exhibit characteristic green (546 nm), red (662 nm), and NIR (749 nm) emission bands. A two-photon absorption process is responsible for the green and red emissions. The colour coordinates of the Ho3+/Yb3+ co-doped SrBi2Ta2O9 phosphors lie in the green region. The values of SR and SA are 0.0040 K−1 and 0.00144 K−1 respectively that are comparable to the other reported values. The results of this study are encouraging enough to project the as prepared SrBi2Ta2O9: Ho3+/Yb3+ phosphors for temperature sensing and other optoelectronic devices applications.

Abstract Image

SrBi2Ta2O9: Ho3+/Yb3+荧光粉在温度传感和光电子器件中的发光研究
采用固相反应法制备了SrBi2Ta2O9: Ho3+/Yb3+荧光粉。样品具有Aba2空间群和正交结构。Ho3+/Yb3+共掺荧光粉的带隙在4.67 ~ 4.71 eV范围内。在紫外激发下,单独掺杂Ho3+的荧光粉在546 nm处发出绿色。在980 nm激发下,SrBi2Ta2O9荧光粉呈现出绿色(546 nm)、红色(662 nm)和近红外(749 nm)的特征发射带。双光子吸收过程是产生绿色和红色辐射的原因。Ho3+/Yb3+共掺杂SrBi2Ta2O9荧光粉的色坐标位于绿色区域。SR和SA值分别为0.0040 K−1和0.00144 K−1,与其他报道值相当。这项研究的结果令人鼓舞,足以预测制备的SrBi2Ta2O9: Ho3+/Yb3+荧光粉用于温度传感和其他光电器件的应用。
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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