Physical mechanisms and integration design of memristors

Abstract

Memristors with threshold transition behavior and rich dynamics are ideal candidates for simulating biological pulse neurons and constructing efficient neuromorphic systems. Based on changes in material structure, charge distribution, molecular polarization and other physical states, new integrated memory-computing devices have been constructed and applied to the sensor-memory-computing integrated systems. In this review, we first discuss the classification of memristive materials from the perspective of device structure design and focus on introducing the working mechanisms of valence variation, polarization, and carrier transfer covered internally. Further, the latest progress of memristors with multi-physical mechanisms is comprehensively summarized, including the formation/fracture of conductive filaments, carrier capture/release, polarization/depolarization. In particular, it is discussed in detail the principles and applications of memristors with different working mechanisms for constructing neuromorphic systems. Finally, the potential challenges and opportunities that may exist in the development of memristors in the coming years are discussed in depth.