Tingting Guo, Yanan Wang, Yan Zhang, Yaqi Shi, Li Duan
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引用次数: 0
Abstract
Cu/HfOx/Pt and Cu/Al2Ox/HfOx/Pt devices were prepared to investigate the resistive switching performance and optical properties. Both HfOx and Al2Ox/HfOx samples show bipolar RS characteristics and good retention. By comparison, Al2Ox/HfOx sample exhibits reduced operating voltage and improved uniformity, which may be related to more oxygen vacancies in Al2Ox film and near Al2Ox/HfOx interface by interfacial reaction. Besides, the rupture of conductive filaments near Al2Ox/HfOx interface retains parts of residual paths in the film which suppress the random formation of oxygen vacancy filaments and improve the stability of the device. By applying 255 nm light, HfOx sample shows no obvious change, while smaller operating voltages is observed for Al2Ox/HfOx sample. In addition, Al2Ox/HfOx sample exhibits multiple resistance states under different light intensities, showing multi-level storage capabilities. The conductive mechanism of Al2Ox/HfOx sample with and without light is consistent with the SCLC effect, which is attributed to the formation and fracture of oxygen vacancy conductive filaments. Results indicate the synergism of light and electric effect can provide a new idea for the development of high storage density memory.
期刊介绍:
Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.