Photo-electric regulation on resistive switching characteristics of HfOx-based memories

IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Tingting Guo, Yanan Wang, Yan Zhang, Yaqi Shi, Li Duan
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Abstract

Cu/HfOx/Pt and Cu/Al2Ox/HfOx/Pt devices were prepared to investigate the resistive switching performance and optical properties. Both HfOx and Al2Ox/HfOx samples show bipolar RS characteristics and good retention. By comparison, Al2Ox/HfOx sample exhibits reduced operating voltage and improved uniformity, which may be related to more oxygen vacancies in Al2Ox film and near Al2Ox/HfOx interface by interfacial reaction. Besides, the rupture of conductive filaments near Al2Ox/HfOx interface retains parts of residual paths in the film which suppress the random formation of oxygen vacancy filaments and improve the stability of the device. By applying 255 nm light, HfOx sample shows no obvious change, while smaller operating voltages is observed for Al2Ox/HfOx sample. In addition, Al2Ox/HfOx sample exhibits multiple resistance states under different light intensities, showing multi-level storage capabilities. The conductive mechanism of Al2Ox/HfOx sample with and without light is consistent with the SCLC effect, which is attributed to the formation and fracture of oxygen vacancy conductive filaments. Results indicate the synergism of light and electric effect can provide a new idea for the development of high storage density memory.

Abstract Image

基于hfox的存储器电阻开关特性的光电调控
制备了Cu/HfOx/Pt和Cu/ alox /HfOx/Pt器件,研究了其电阻开关性能和光学性能。HfOx和alox /HfOx样品均表现出双极性RS特征和良好的保留率。相比之下,al2o /HfOx样品的工作电压降低,均匀性提高,这可能与al2o薄膜和al2o /HfOx界面附近通过界面反应产生更多的氧空位有关。此外,alox /HfOx界面附近导电丝的断裂保留了薄膜中部分残留路径,抑制了氧空位丝的随机形成,提高了器件的稳定性。施加255 nm光时,HfOx样品没有明显变化,而alox /HfOx样品的工作电压较小。此外,alox /HfOx样品在不同光强下呈现多种电阻状态,表现出多层次的存储能力。在有光和无光条件下,alox /HfOx样品的导电机理与SCLC效应一致,这是由于氧空位导电丝的形成和断裂。结果表明,光与电的协同效应为高存储密度存储器的开发提供了新的思路。
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来源期刊
Applied Surface Science
Applied Surface Science 工程技术-材料科学:膜
CiteScore
12.50
自引率
7.50%
发文量
3393
审稿时长
67 days
期刊介绍: Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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